Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of Enclosed-Layout Transistors (ELTs) Through Low-Temperature Deuterium Annealing and Their Electrical Characterizations

저온 중수소 어닐링을 활용한 Enclosed-Layout Transistors (ELTs) 소자의 제작 및 전기적 특성분석

  • Dong-Hyun Wang (School of Electronics Engineering, Chungbuk National University) ;
  • Dong-Ho Kim (School of Electronics Engineering, Chungbuk National University) ;
  • Tae-Hyun Kil (School of Electronics Engineering, Chungbuk National University) ;
  • Ji-Yeong Yeon (Key Foundry Co., Ltd.) ;
  • Yong-Sik Kim (Department of Semiconductor Engineering, Daelim University College) ;
  • Jun-Young Park (School of Electronics Engineering, Chungbuk National University)
  • Received : 2023.10.16
  • Accepted : 2023.11.08
  • Published : 2024.01.01
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Abstract

The size of semiconductor devices has been scaled down to improve packing density and output performance. However, there is uncontrollable spreading of the dopants that comprise the well, punch-stop, and channel-stop when using high-temperature annealing processes, such as rapid thermal annealing (RTA). In this context, low-temperature deuterium annealing (LTDA) performed at a low temperature of 300℃ is proposed to reduce the thermal budget during CMOS fabrication. The LTDA effectively eliminates the interface trap in the gate dielectric layer, thereby improving the electrical characteristics of devices, such as threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and off-state current (IOFF). Moreover, the LTDA is perfectly compatible with CMOS processes.

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Acknowledgement

This research was supported by Chungbuk National University Korea National University Development Project (2023).

References

  1. M. Badaroglu, Proc. 2021 IEEE International Roadmap for Devices and Systems Outbriefs (IEEE, Santa Clara, USA, 2022) p. 1. doi: https://doi.org/10.1109/IRDS54852.2021.00010
  2. J. Y. Yeon, K. S. Lee, S. S. Yoon, J. W. Yeon, H. Bae, and J. Y. Park, J. Korean Inst. Electr. Electron. Mater. Eng., 35, 576 (2020). doi: https://doi.org/10.4313/JKEM.2022.35.6.6
  3. D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur, and H.S.P. Wong, Proc. IEEE, 89, 259 (2001). doi: https://doi.org/10.1109/5.915374
  4. D. H. Wang and J. Y. Park, J. Korean Inst. Electr. Electron. Mater. Eng., 36, 50 (2022). doi: https://doi.org/10.4313/JKEM.2022.35.1.8
  5. C. P. Lin, B. Y. Tsui, M. J. Yang, R. H. Huang, and C. H. Chien, IEEE Electron Device Lett., 27, 360 (2006). doi: https://doi.org/10.1109/LED.2006.872832
  6. Y. R. Jhan, Y. C. Wu, Y. L. Wang, Y. J. Lee, M. F. Hung, H. Y. Lin, Y. H. Chen, and M. S. Yeh, IEEE Electron Device Lett., 36, 105 (2014). doi: https://doi.org/10.1109/LED.2014.2386213
  7. D. H. Jung, J. Y. Ku, D. H. Wang, Y. S. Son, and J. Y. Park, J. Korean Inst. Electr. Electron. Mater. Eng., 35, 264 (2022). doi: https://doi.org/10.4313/JKEM.2022.35.3.8
  8. J. M. Yu, D. H. Wang, J. Y. Ku, J. K. Han, D. H. Jung, J. Y. Park, and Y. K. Choi, Solid-State Electron., 197, 108421 (2022). doi: https://doi.org/10.1016/j.sse.2022.108421
  9. D. H. Wang, S. S. Yoon, J. Y. Ku, D. H. Jung, K. S. Lee, D. Kim, and J. Y. Park, IEEE Trans. Device Mater. Reliab., 23, 297 (2023). doi: https://doi.org/10.1109/TDMR.2023.3275947
  10. J. Y. Ku, J. M. Yu, D. H. Wang, D. H. Jung, J. K. Han, Y. K. Choi, and J. Y. Park, IEEE Trans. Electron Devices, 70, 3958 (2023). doi: https://doi.org/10.1109/TED.2023.3278626
  11. H. G. Lee, S. H. Oh, and G. Fuller, IEEE Trans. Electron Devices, 29, 326 (1982). doi: https://doi.org/10.1109/T-ED.1982.20707
  12. J. Y. Park, D. I. Moon, G. B. Lee, and Y. K. Choi, IEEE Trans. Electron Devices, 67, 777 (2020). doi: https://doi.org/10.1109/TED.2020.2964846
  13. J. Y. Ku, K. S. Lee, D. H. Jung, D. H. Wang, S. Oh, K. Lee, B. Cho, H. Bae, and J. Y. Park, IEEE Trans. Device Mater. Reliab., 23, 276 (2023). doi: https://doi.org/10.1109/TDMR.2023.3270920
  14. D. H. Kim, S. K. Lim, H. Bae, C. K. Kim, S. W. Lee, M. Seo, S. Y. Kim, K. M. Hwang, G. B. Lee, B. H. Lee, and Y. K. Choi, IEEE Trans. Electron Devices, 65, 1640 (2018). doi: https://doi.org/10.1109/TED.2018.2805316
  15. J. M. Yu, J. Y. Park, T. J. Yoo, J. K. Han, D. H. Yun, G. B. Lee, J. Hur, B. H. Lee, S. Y. Kim, B. H. Lee, and Y. K. Choi, IEEE Trans. Electron Devices, 67, 3903 (2020). doi: https://doi.org/10.1109/TED.2020.3008882