Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Strategy on the Growth of Large Area Polycrystalline Si Virtual Substrate Using Al-Induced Crystallization

알루미늄 유도 결정화를 이용한 대면적 다결정 Si 가상 기판 성장 전략

  • Dohyun Kim (Division of Advanced Materials Engineering, Jeonbuk National University) ;
  • Kwangwook Park (Division of Advanced Materials Engineering, Jeonbuk National University)
  • 김도현 (전북대학교 신소재공학부) ;
  • 박광욱 (전북대학교 신소재공학부)
  • Received : 2023.10.30
  • Accepted : 2023.11.12
  • Published : 2024.01.01
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Abstract

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

Keywords

Acknowledgement

이 성과는 정부(과학기술정보통신부)의 재원으로 한국연구재단의 지원을 받아 수행된 연구임(NRF-2022R1F1A1064130).

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