Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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Impact of Oxygen Annealing on Deep-level Traps in Ga2O3/SiC Photodetectors

산소 후열처리에 따른 Ga2O3/SiC photodetector의 전기 광학적 특성

  • Seung-Hwan Chung (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Tae-Hee Lee (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Soo-Young Moon (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Se-Rim Park (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Hyung-Jin Lee (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Geon-Hee Lee (Dept. of Electronic materials Engineering, Kwangwoon University) ;
  • Sang-Mo Koo (Dept. of Electronic materials Engineering, Kwangwoon University)
  • Received : 2023.08.25
  • Accepted : 2023.09.26
  • Published : 2023.09.30
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Abstract

In this work, we investigated the role of oxygen annealing on the performance of Metal-Semiconductor-Metal (MSM) UV photodetector (PD) fabricated by radio frequency (RF)-sputtered Ga2O3 films on SiC substrates. Oxygen-nnealed Ga2O3 films displayed a notable increase in photocurrent and a faster decay time, indicating a decrease in persistent photoconductivity. This improvement is attributed to the reduction of oxygen vacancies and variation of defects by oxygen post-annealing. Our findings provide valuable insights into enhancing PD performance through oxygen annealing.

본 연구에서는 radio frequency (RF)-스퍼터링을 이용하여 SiC 기판 위에 Ga2O3 박막을 증착하여 Metal-Semiconductor-Metal (MSM) UV photodetector (PD)를 제작하였고, 산소 후열처리에 따른 PD 성능을 연구하였다. 산소 후열처리된 Ga2O3 박막은 외부 광에 대한 전류의 상당한 증가와 시간 의존성 on/off 광 응답 특성에서 측정된 감소시간이 1.21, 1.12 s로 후열처리를 하지 않은 박막의 감소시간인 1.34, 3.01 s 보다 더 빠른 반응을 보여주었다. 이러한 특성은 산소 후열처리 후의 산소 공공 및 결함 분포 변화에 기인한다. 우리의 연구 결과는 산소 후열처리가 PD 성능 향상에 영향을 미칠 수 있다는 것을 확인하였다.

Keywords

Acknowledgement

This work was supported by the Korea Institute for Advancement of Technology (KIAT) (P0012451), the National Research Foundation (NRF) funded by the Korea government(MSIT)(2021R1F1A1057620), and a research grant from Kwangwoon university in 2023.

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