과제정보
이 연구는 2023년 교육부의 재원으로 한국기초과학지원연구원 국가연구시설장비진흥센터의 지원(No. 2019R1A6C1010045)과 2023년 정부(산업통상자원부)의 재원으로 한국산업기술진흥원의 지원(P0012451, 2023년 산업혁신인재성장지원사업) 및 정부(과학기술정보통신부)의 재원으로 한국연구재단-나노 및 소재기술개발사업의 지원을 받아 수행된 연구임(2021M3H4A3A01061784).
참고문헌
- Baliga, B. Jayant, "Semiconductors for high-voltage, vertical channel field-effect transistors", J. Appl. Phys. 53.3 (1982) 1759.
- M. Higashiwaki, H. Murakami, Y. Kumagai and A. Kuramata, "Current status of Ga2O3 power devices", Japanese J. Appl. Phys. 55.12 (2016) 1202A1.
- H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa and Y. Yaguchi, "Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method", Japanese J. Appl. Phys. 47.11R (2008) 8506.
- X. Ze-Ning, X. Xiang-Qian, L. Yue-Wen, H. Xue-Mei, X. Zi-Li, C. Peng, L. Bin, H. Ping, Z. Rong and Z. You-Dou, "Growth of β-Ga2O3 films on sapphire by hydride vapor phase epitaxy", Chin. Phys. Lett. 35.5 (2018) 058101.
- Z. Shengnan, L. Xiaozheng, M. Yanchao, L. Weidan, Z. Yingwu, X. Yongkuan and C. Hongjuan, "Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method", J. Semiconductors 39.8 (2018) 083003.
- F. Bo, M. Wenxiang, Z. Jin, W. Xiqiu, Z. Wenchang, Y. Yanru, J. Zhitai and T. Xutang, "A study on the technical improvement and the crystalline quality optimization of columnar β-Ga2O3 crystal growth by an EFG method", CrystEngComm 22.30 (2020) 5060.
- H.F. Mohamed, X. Changtai, S. Qinglin, C. Huiyuan, P. Mingyan and Q. Hongji, "Growth and fundamentals of bulk β-Ga2O3 single crystals", J. Semiconductors 40.1 (2019) 011801.
- X. HuiWen, H. QiMing, J. GuangZhong, L. ShiBing, P. Tao and L. Ming, "An overview of the ultrawide bandgap Ga2O3 semiconductor-based Schottky barrier diode for power electronics application", Nanoscale Res. Lett. 13.1 (2018) 1.
- N. Suzuki, S. Ohira, M. Tanaka, T. Sugawara, K. Nakajima and T. Shishido, "Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal", Phys. Status Solidi C 4.7 (2007) 2310.
- K. Akito, K. Kimiyoshi, W. Shinya, Y. Yu, M. Takekazu and Y. Shigenobu, "High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth", Japanese J. Appl. Phys. 55.12 (2016) 1202A2.
- T. Huili, H. Nuotian, Z. Hao, L. Bo, Z. Zhichao, X. Mengxuan, C. Liang, L. Jinliang, O. Xiaoping and X. Jun, "Inhibition of volatilization and polycrystalline cracking, and the optical properties of β-Ga2O3 grown by the EFG method", CrystEngComm 22.5 (2020) 924.
- S. Arjan, K. Okan, T. Nicholas, M. Jonathan, J. Debdeep, X. Huili (Grace), P. Hartwin and R. Farhan, "Intra-and inter-conduction band optical absorption processes in β-Ga2O3", Appl. Phys. Lett. 117.7 (2020) 072103.
- Z. Hajanl, J. Miro, G. Kiss, F. Reti, P. Deak, R.C. Herndon and J.M. Kuperberg, "Role of oxygen vacancy defect states in the n-type conduction of β-Ga2O3", J. Appl. Phys. 86.7 (1999) 3792.