과제정보
This work was supported by Institute of Information & communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (2021-0-01764-001, Charge-Storage-Memory-Based PIM Development) and in part by the Technology Innovation Program (RS-2023-00235655) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) and in part by Korea Institute for Advancement of Technology (KIAT) grant funded by the Korea Government (MOTIE) (N000P0008500, The Competency Development Program for Industry Specialist).
참고문헌
- Jae-Min Sim, Myounggon Kang, and Yun-Heub Song, "A new read scheme for alleviating cell-tocell interference in scaled-down 3D NAND flash memory," Electronics 9, no.11: 1775. 2020. DOI: 10.3390/electronics9111775
- M. Park, K. Kim, J. -H. Park and J. -H. Choi, "Direct field effect of neighboring cell transistor on cell-to-cell interference of NAND flash cell arrays," in IEEE Electron Device Letters, vol.30, no.2, pp.174-177, 2009. DOI: 10.1109/LED.2008.2009555.
- K. -T. Park, Myounggon Kang et al, "A zeroing cell-to-cell interference page architecture with temporary LSB storing and parallel MSB program scheme for MLC NAND flash memories," in IEEE Journal of Solid-State Circuits, vol.43, no.4, pp. 919-928, 2008. DOI: 10.1109/JSSC.2008.917558.
- Giuk Kim, Myounggon Kang, et al, "High performance ferroelectric field-effect transistors for large memory-window, high-reliability, highspeed 3D vertical NAND flash memory," Journal of Materials Chemistry C, 10.26: 9802-9812, 2022. DOI: 10.1039/D2TC01608G
- S Han, Y Jeong, H Jhon, Myounggon Kang, "Investigation of inhibited channel potential of 3D NAND flash memory according to word-line location," Electronics. 9(2): 268, 2020. DOI: 10.3390/electronics9020268
- Beomsu Kim, Myounggon Kang. "Optimal bias condition of dummy WL for sub-block GIDL erase operation in 3D NAND flash memory," Electronics. 11(17): 2738, 2022. DOI: 10.3390/electronics11172738
- C. Zambelli, R. Micheloni, S. Scommegna and P. Olivo, "First evidence of temporary read errors in TLC 3D-NAND flash memories exiting from an idle state," in IEEE Journal of the Electron Devices Society, vol.8, pp.99-104, 2020. DOI: 10.1109/JEDS.2020.2965648.
- D. Son, J. Park and H. Shin, "Investigation and compact modeling of hot-carrier injection for read disturbance in 3-D NAND flash memory," in IEEE Transactions on Electron Devices, vol.67, no.7, pp.2778-2784, 2020. DOI: 10.1109/TED.2020.2993772.
- I Ham, Y Jeong, SJ Baik, Myounggon Kang, "Ferroelectric polarization aided low voltage operation of 3D NAND flash memories," Electronics. 10(1): 38, 2021. DOI: 10.3390/electronics10010038
- J, Lee. J, Lee, & Myounggon Kang, "The analysis of lateral charge migration at 3D-NAND flash memory by tapering and ferroelectric polarization," Journal of IKEEE, 25(4), 770-773, 2021. DOI: 10.7471/ikeee.2021.25.4.770
- S Choi, JK Jeong, Myounggon Kang, Y-h Song, "A novel structure to improve the erase speed in 3D NAND flash memory to which a cell-on-peri (COP) structure and a ferroelectric memory device are applied," Electronics. 11(13): 2038, 2022. DOI: 10.3390/electronics11132038
- D. Kang et al. "Analysis of the current path for a vertical NAND flash cell with program/erase states," Semiconductor. Sci. Technol. 31 2016, 035011. DOI: 10.1088/0268-1242/31/3/035011
- J. Kim, Myounggon Kang et al., "Modeling of Channel Current in Sub-threshold Region for Poly-Si based Macaroni Structure in 3D NAND Flash Memories," Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, 2019, pp.200-202. DOI: 10.1109/EDTM.2019.8731334.
- D. Ryu, I. Myeong, J. K. Lee, Myounggon Kang, J. Jeon and H. Shin, "Investigation of gate sidewall spacer optimization from OFF-state leakage current perspective in 3-nm node device," in IEEE Transactions on Electron Devices, vol.66, no.6, pp.2532-2537, 2019. DOI: 10.1109/TED.2019.2912394.
- J. -M. Sim, Myounggon Kang and Y. -H. Song, "A novel program operation scheme with negative bias in 3-D NAND flash memory," in IEEE Transactions on Electron Devices, vol.68, no.12, pp.6112-6117, 2021. DOI: 10.1109/TED.2021.3121648.