Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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A Study on Plasma Corrosion Resistance and Cleaning Process of Yttrium-based Materials using Atmospheric Plasma Spray Coating

Atmospheric Plasma Spray코팅을 이용한 Yttrium계 소재의 내플라즈마성 및 세정 공정에 관한 연구

  • Kwon, Hyuksung (Vacuum Materials Measurement Team, Korea Research Institute of Standards and Science) ;
  • Kim, Minjoong (Vacuum Materials Measurement Team, Korea Research Institute of Standards and Science) ;
  • So, Jongho (Vacuum Materials Measurement Team, Korea Research Institute of Standards and Science) ;
  • Shin, Jae-Soo (Department of Advanced Materials Engineering, Daejeon University) ;
  • Chung, Chin-Wook (Department of Electrical Engineering, Hanyang University) ;
  • Maeng, SeonJeong (Vacuum Materials Measurement Team, Korea Research Institute of Standards and Science) ;
  • Yun, Ju-Young (Vacuum Materials Measurement Team, Korea Research Institute of Standards and Science)
  • 권혁성 (한국표준과학연구원 진공소재측정팀) ;
  • 김민중 (한국표준과학연구원 진공소재측정팀) ;
  • 소종호 (한국표준과학연구원 진공소재측정팀) ;
  • 신재수 (대전대학교 신소재공학과) ;
  • 정진욱 (한양대학교 전기공학과) ;
  • 맹선정 (한국표준과학연구원 진공소재측정팀) ;
  • 윤주영 (한국표준과학연구원 진공소재측정팀)
  • Received : 2022.09.06
  • Accepted : 2022.09.19
  • Published : 2022.09.30
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Abstract

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y2O3 and Y3Al5O12 (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF4, O2, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H2SO4(3):H2O2(1)) to remove the defect-causing surface fluorinated film. APS-Y2O3 and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

Keywords

Acknowledgement

본 연구는 한국표준과학연구원의 첨단소재 특성화 플랫폼(KRISS-2022-GP2022-0013-06)과 산업통상자원부의 소재부품기술개발사업(20003660)의 지원을 받아 수행되었습니다.

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