Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Photoelectrochemical property of thermal copper oxide thin films

열성장을 통해 형성된 산화구리의 광전기화학적 특성

  • Choi, Yongseon (Department of Chemistry and Chemical Engineering, Inha University) ;
  • Yoo, JeongEun (Department of Chemistry and Chemical Engineering, Inha University) ;
  • Lee, Kiyoung (Department of Chemistry and Chemical Engineering, Inha University)
  • 최용선 (인하대학교 화학.화학공학융합학과) ;
  • 유정은 (인하대학교 화학.화학공학융합학과) ;
  • 이기영 (인하대학교 화학.화학공학융합학과)
  • Received : 2022.08.19
  • Accepted : 2022.08.23
  • Published : 2022.08.31
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Abstract

In the present work, copper oxide thin films were formed by heat-treatment method with different temperatures and atmosphere, e.g., at 200 ~ 400 ℃; in air and Ar atmosphere. The morphological, electrical and optical properties of the thermally fabricated Cu oxide films were analyzed by SEM, XRD, and UV-VIS spectrometer. Thereafter, photoelectrochemical properties of the thermal copper oxide films were analyzed under solar light (AM 1.5, 100 mW/cm2). Conclusively, the highest photocurrent was obtained with Cu2O formed under the optimum annealing condition at 300 ℃ in air atmosphere. In addition, EIS results of Cu oxide formed in air atmosphere showed relatively low resistance and long electron life-time compared with Cu Oxide fabricated in Ar atmosphere at the same temperature. This is because heat-treatment in Ar atmosphere could not form Cu2O due to lack of oxygen, and thermally formed CuO at high temperature suppressed stability and conductivity of the Cu oxide.

Keywords

Acknowledgement

본 연구는 2021년 산업통상자원부의 재원으로 한국에너지기술평가원(KETEP)의 지원을 받아 수행한 연구과제입니다. (No. 2021202080023C)

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