과제정보
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1A6A1A03038697) and This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (2021R1I1A3052426).
참고문헌
- M. Jain, Y. Li, M. F. Hundley, M. Hawley, B. Maiorov, I. H. Campbell, L. Civale, Q. X. Jia, P. Shukla, A. K. Burrell, and T. M. McCleskey, Appl. Phys. Lett., 88, 232510 (2006). [DOI: https://doi.org/10.1063/1.2207497]
- S. Jin, T. H. Tiefel, M. McCormack, R. A. Fastnacht, R. Ramesh, and L. H. Chen, Science, 264, 413 (1994). [DOI: https://doi.org/10.1126/science.264.5157.413]
- R. von Helmolt, J. Wecker, B. Holzapfel, L. Schultz, and K. Samwer, Phys. Rev. Lett., 71, 2331 (1993). [DOI: https://doi.org/10.1103/PhysRevLett.71.2331]
- L. Mechin, J. M. Routoure, B. Guillet, F. Yang, S. Flament, D. Robbes, and R. A. Chakalov, Appl. Phys. Lett., 87, 204103 (2005). [DOI: https://doi.org/10.1063/1.2130383]
- A. Feltz, J. Eur. Ceram. Soc., 20, 2367 (2000). [DOI: https://doi.org/10.1016/S0955-2219(00)00149-7]
- A. J. Millis, Nature, 392, 147 (1998). [DOI: https://doi.org/10.1038/32348]
- N. Paul, S. Vadnala, A. Agrawal, S. R. Vanjari, and S. Govind Singh, Proc. 2018 IEEE Electron Devices Kolkata Conference (EDKCON) (IEEE, Kolkata, India, 2018) p. 55-59. [DOI: https://doi.org/10.1109/EDKCON.2018.8770457]
- I. B. Shim, Y. Jei, S. Ho, and S.Y. Choi, J. Korean Phys. Soc., 37, 425 (2000).
- J. P. Zhou, J. T. McDevitt, J. S. Zhou, H. Q. Yin, J. B. Goodenough, Y. Gim, and Q. X. Jia, Appl. Phys. Lett., 75, 1146 (1999). [DOI: https://doi.org/10.1063/1.124624]
- Y. Kang, H. Kim, and S. Yoo, Appl. Phys. Lett., 95, 052510 (2009). [DOI: https://doi.org/10.1063/1.3177192]
- K. Park and I. H. Han, Mater. Sci. Eng. B, 119, 55 (2005). [DOI: https://doi.org/10.1016/j.mseb.2005.01.018]
- A. Urushibara, Y. Moritomo, T. Arima, A. Asamitsu, G. Kido, and Y. Tokura, Phys. Rev. B, 51, 14103 (1995) [DOI: https://doi.org/10.1103/PhysRevB.51.14103]
- L. M. Rodriguez-Martinez and J. P. Attfield, Phys. Rev. B, 58, 2426 (1998). [DOI: https://doi.org/10.1103/PhysRevB.58.2426]
- D. Varshney, I. Mansuri, N. Kaurav, W. Q. Lung, and Y. K. Kuo, J. Magn. Magn. Mater., 324, 3276 (2012) [DOI: https://doi.org/10.1016/j.jmmm.2012.05.028]
- L. He and Z. Y. Ling, J. Appl. Phys., 110, 093708 (2011). [DOI: https://doi.org/10.1063/1.3657772]
- E. D. Macklen, Thermistors (Electrochemical Publications Ltd. Scotland, 1979) p. 33.
- J. G. Fagan and V.R.W. Amarakoon, American Ceramic Society Bulletin, 72, 1 (1993).
- R. Schmit, A. Basu, A. W. Brinkman, Z. Klusek, and P. K. Datta, Appl. Phys. Lett., 86, 073501 (2005). [DOI: https://doi.org/10.1063/1.1866643]
- B. I. Shklovskii and A. L. Efros, Electrical Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984) p. 45.