Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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High dv/dt immunity, high insulation voltage, ultra-compact, inductive power supply for gate-drivers of wide-bandgap semiconductor switches

  • Lee, Jaehong (School of Electric and Computer Engineering, University of Seoul) ;
  • Roh, Junghyeon (School of Electric and Computer Engineering, University of Seoul) ;
  • Kim, Sungmin (Department of Electrical and Electronic Engineering, Hanyang University, ERICA Campus) ;
  • Lee, Seung‑Hwan (School of Electric and Computer Engineering, University of Seoul)
  • Received : 2021.12.06
  • Accepted : 2022.04.04
  • Published : 2022.06.20
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Abstract

The high dv/dt transient speed of wide-bandgap (WBG) semiconductor switches can generate common-mode current of considerable magnitude, which can distort the gating signals. An isolated power supply is required for gate-driver circuits to prevent the faulty operation of the switches. However, an isolation capacitance of several pF between the gate-driver circuit and the main control circuit induces a common-mode current, which is suficiently large to distort the switching signals. In this study, an isolated power supply with a high dv/dt immunity, ultra-compact size, and high insulation voltage is developed using inductive power transfer (IPT) coils. A parameter design method for a series-parallel compensated IPT system that can achieve a load-independent output voltage is presented. In addition, a novel design for I-core coils is proposed using finite element analysis results. An isolation capacitance of 1.6 pF between the primary and secondary coils was achieved over a 4 mm air gap. The dimensions of the IPT coils were 38 × 22 × 15 mm3. The measured coil-to-coil and DC-to-DC efficiencies at an output power of 12 W were 95% and 87%, respectively.

Keywords

Acknowledgement

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT). (No. 2021R1A2C2009335)

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