Korean Chemical Engineering Research

  • 제60권2호
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  • Pages.313-319
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  • 2022
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  • 0304-128X(pISSN)
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  • 2233-9558(eISSN)
한국화학공학회 (The Korean Institute of Chemical Engineers)
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게이트 하부 식각 구조 및 HfO2 절연층이 도입된 AlGaN/GaN 기반 전계 효과 트랜지스터

AlGaN/GaN Field Effect Transistor with Gate Recess Structure and HfO2 Gate Oxide

  • 김유경 (단국대학교 화학공학과) ;
  • 손주연 (단국대학교 화학공학과) ;
  • 이승섭 (단국대학교 화학공학과) ;
  • 전주호 (단국대학교 화학공학과) ;
  • 김만경 (단국대학교 화학공학과) ;
  • 장수환 (단국대학교 화학공학과)
  • Kim, Yukyung (Department of Chemical Engineering, Dankook University) ;
  • Son, Juyeon (Department of Chemical Engineering, Dankook University) ;
  • Lee, Seungseop (Department of Chemical Engineering, Dankook University) ;
  • Jeon, Juho (Department of Chemical Engineering, Dankook University) ;
  • Kim, Man-Kyung (Department of Chemical Engineering, Dankook University) ;
  • Jang, Soohwan (Department of Chemical Engineering, Dankook University)
  • 투고 : 2021.12.20
  • 심사 : 2021.12.29
  • 발행 : 2022.05.01
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초록

HfO2을 게이트 산화막으로 갖는 AlGaN/GaN 기반 고이동도 전계효과 트랜지스터(high electron mobility transistor, HEMT)의 노멀리 오프(normally-off) 작동 구현을 위하여 게이트 리세스(gate-recess) 깊이에 따른 소자 특성이 시뮬레이션을 통하여 분석되었다. 전통적인 HEMT 구조, 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조, 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조가 모사되었다. 전통적인 HEMT 구조는 노멀리 온(normally-on) 특성을 나타내었으며, 0 V의 게이트 전압 및 15 V의 드레인 전압 환경에서 0.35 A의 드레인 전류 특성을 나타내었다. 3 nm의 두께를 갖는 게이트 리세스된 HEMT 구조는 2DEG(2-dimensional electron gas) 채널의 전자 농도 감소로 인해, 같은 전압 인가 조건에서 0.15 A의 드레인 전류 값을 보였다. 게이트 영역에 AlGaN 층을 갖지 않는 HEMT 구조는 뚜렷한 노멀리 오프 동작을 나타내었으며, 0 V의 동작전압 값을 확인할 수 있었다.

AlGaN/GaN based HfO2 MOSHEMT (metal oxide semiconductor high electron transistor) with different gate recess depth was simulate to demonstrate a successful normally-off operation of the transistor. Three types of the HEMT structures including a conventional HEMT, a gate-recessed HEMT with 3 nm thick AlGaN layer, and MIS-HEMT without AlGaN layer in the gate region. The conventional HEMT showed a normally-on characteristics with a drain current of 0.35 A at VG = 0 V and VDS = 15 V. The recessed HEMT with 3 nm AlGaN layer exhibited a decreased drain current of 0.15 A under the same bias condition due to the decrease of electron concentration in 2DEG (2-dimensional electron gas) channel. For the last HEMT structure, distinctive normally- off behavior of the transistor was observed, and the turn-on voltage was shifted to 0 V.

키워드

과제정보

이 성과는정부(과학기술정보통신부)의 재원으로 한국연구재단의 지원을 받아 수행된 연구임(No. 2021R1F1A1056647).

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