Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

Effect of Substrate Temperature and Hydrogen Ambient Gases on the Structural and Electrical Characteristics of IGZO Thin Films

기판온도 및 수소 분위기 가스에 따른 IGZO 투명전도성박막의 구조적 및 전기적 특성

  • Bae, Jang Ho (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu Mann (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education)
  • 배장호 (한국기술교육대학교 에너지신소재화학공학부 미래융합공학전공) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부 미래융합공학전공)
  • Received : 2022.01.21
  • Accepted : 2022.03.25
  • Published : 2022.03.31
Download PDF
⟨ Previous Next ⟩

Abstract

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H2 flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

Keywords

Acknowledgement

본 논문은 교육부의 재원으로 한국연구재단의 BK21 FOUR 사업, 2020학년도 한국기술교육대학교 교수교육연구진흥과제 및 2021년도 교육부의 재원으로 한국연구재단의 지원을 받아 수행된 지자체-대학 협력기반 지역혁신 사업.(2021RIS-004)의 결과입니다.

References

  1. K. Ishibashi, K. Hirata, and N. Hosokawa, "Mass spectrometric ion analysis in the sputtering of oxide targets", Journal of Vacuum Science & Technology A., 10, Iss. 4, pp. 1718-1722 (1992). https://doi.org/10.1116/1.577776
  2. K. Tominaga, T. Udea, T. Ao, A. Katkoka, and I. Mori, "ITO films prepared by facing target system", Thin Solid Films, 281-282, pp. 194-197 (1996). https://doi.org/10.1016/0040-6090(96)08611-7
  3. Y. Hoshi, H. Kato, and K. Funatsu, "Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering", Thin Solid Films, 445, pp. 245-250 (2003). https://doi.org/10.1016/S0040-6090(03)01182-9
  4. Radhouane Bel Hadj Tahar, Takayuki Ban, Yutaka Ohya, and Yasutaka Takahashi, "Tin doped indium oxide thin films: Electrical properties", J. Appl. Phys., 83, pp. 2631-2645 (1998). https://doi.org/10.1063/1.367025
  5. Tania Konry, Robert S. Marks, "Physico-chemical studies of indium tin oxide-coated fiber optic biosensors", Thin Solid Films, 492, pp. 313-321 (2005). https://doi.org/10.1016/j.tsf.2005.07.049
  6. Takafumi Aoi, Nobuto Oka, Yasushi Sato, Ryo Hayashi, Hideya Kumomi and Yuzo Shigesato. "DC sputter deposition of amorphous indium-gallium-zinc-oxide(a-IGZO) films with H2O introduction", Thin Solid Films, 518, pp. 3004-3007 (2010) https://doi.org/10.1016/j.tsf.2009.09.176
  7. H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application", Journal of non-crystalline solids, 352, pp.851-858 (2002). https://doi.org/10.1016/j.jnoncrysol.2006.01.073
  8. K. Nomura, T. Kamita and H. Hosono, "Effects of diffusion of hydrogen and oxygen on electrical properties of amorphous oxide semiconductor, In-GaZn-O", ECS J Solid State Sci. Technol. 2, p5-p8 (2013)
  9. N. Ito, Y. Sato, P.K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, "Electrical and optical properties of amorphous indium zinc oxide films", Thin Solid Films, 496(1), pp.99-103 (2006). https://doi.org/10.1016/j.tsf.2005.08.257
  10. S. I. Hann and H. B. Kim, "A Study on Properties of RF-sputtered Al-doped ZnO Thin Films Prepared with Different Ar Gas Flow Rates," Appl. Sci. Converg. Technol. 25(6), pp. 145-148 (2016) https://doi.org/10.5757/ASCT.2016.25.6.145
  11. K. L. Hong and K. M. Lee, "Effect of Substrate Temperature and Gas Flow Rate of Atmosphere Gases on Structural and Electrical Properties of AZO Thin Film," Journal of the Semiconductor & Display Technology, 20, pp. 1-6 (2021).
  12. K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, "Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process", Nature Materials, 10, pp. 45-50 (2011). https://doi.org/10.1038/nmat2914
  13. Y. S. Jung, J. Y. Seo, D. W. Lee, and D. Y. Jeon, "Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film", Thin Solid Films, 445, pp.63-71(2003). https://doi.org/10.1016/j.tsf.2003.09.014