Acknowledgement
This research was supported by Samsung Electronics Company, Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A3B0704995213), and the Integrated Circuit Design Education Center (IDEC) in Korea, and we are grateful for this. We also thank the photometry and radiometry group of Korea Research Institute of Standards and Science (KRISS) for supporting the photocurrent measurement.
References
- L. Yao, K. Y. Yung, R. Khan, V. P. Chodavarapu, and F. V. Bright, "CMOS Imaging of Pin-Printed Xerogel-Based Luminescent Sensor Microarrays", IEEE Sens. J., Vol. 10, No. 12, pp. 1824-1832, 2010. https://doi.org/10.1109/JSEN.2010.2047497
- E. R. Fossum, "CMOS image sensors: electronic camera-on-a-chip", IEEE Trans. Electron Devices, Vol. 44, No. 10, pp. 1689-1698, 1997. https://doi.org/10.1109/16.628824
- M. Bigas, E. Cabruja, J. Forest, and J. Salvi, "Review of CMOS image sensors", Microelectronics J., Vol. 37, No. 5, pp. 433-451, 2006. https://doi.org/10.1016/j.mejo.2005.07.002
- A. Dieguez, O. Alonso, E. Vilella, and A. Vila, "A Verilog-A model for the design of devices for fluorescence life-time measurement with CMOS SPADs", 2015 Int. Conf. Synth. Model. Anal. Simul. Methods Appl. to Circuit Des. SMACD 2015, pp. 1-4, 2015.
- S. Lindner, C. Zhang, I. M. Antolovic, M. Wolf, and E. Charbon, "A 252 × 144 SPAD Pixel Flash Lidar with 1728 Dual-Clock 48.8 PS TDCs, Integrated Histogramming and 14.9-to-1 Compression in 180NM CMOS Technology", IEEE Symp. VLSI Circuits, Dig. Tech. Pap., pp. 69-70, 2018.
- W. Shi and A. Pan, "Mixed Design of SPAD Array Based TOF for Depth Camera and Unmanned Vehicle Applications", SMACD 2018 - 15th Int. Conf. Synth. Model. Anal. Simul. Methods Appl. to Circuit Des., pp. 277-280, 2018.
- J. Kekkonen, T. Talala, J. Nissinen, and I. Nissinen, "On the Spectral Quality of Time-Resolved CMOS SPAD-Based Raman Spectroscopy with High Fluorescence Backgrounds", IEEE Sens. J., Vol. 20, No. 9, pp. 4635-4645, 2020. https://doi.org/10.1109/jsen.2020.2966119
- L. Frey, M. Marty, S. Andre, and N. Moussy, "Enhancing Near-Infrared Photodetection Efficiency in SPAD with Silicon Surface Nanostructuration", IEEE J. Electron Devices Soc., Vol. 6, No. 1, pp. 392-395, 2018. https://doi.org/10.1109/JEDS.2018.2810509
- J. M. Pavia, M. Scandini, S. Lindner, M. Wolf, and E. Charbon, "A 1 × 400 Backside-Illuminated SPAD Sensor with 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography", IEEE J. Solid-State Circuits, Vol. 50, No. 10, pp. 2406-2418, 2015. https://doi.org/10.1109/JSSC.2015.2467170
- I. Vornicu, R. Carmona-Galan, and A. Rodriguez-Vazquez, "On the calibration of a SPAD-based 3D imager with in-pixel TDC using a time-gated technique", Proc. IEEE Int. Symp. Circuits Syst., pp. 1102-1105, 2015.
- C. Zhang, S. Lindner, I. M. Antolovic, J. Mata Pavia, M. Wolf, and E. Charbon, "A 30-frames/s, 252 × 144 SPAD Flash LiDAR with 1728 Dual-Clock 48.8-ps TDCs, and Pixel-Wise Integrated Histogramming", IEEE J. Solid-State Circuits, Vol. 54, No. 4, pp. 1137-1151, 2019. https://doi.org/10.1109/jssc.2018.2883720
- S. H. Seo, K. Do Kim, M. W. Seo, J. S. Kong, J. K. Shin, and P. Choi, "Optical characteristics of an N-Well/gate-tied PMOSFET-type photodetector with built-in transfer gate for CMOS image sensor", Sensors Mater., Vol. 19, No. 7, pp. 435-444, 2007.
- H. Kwen, S. H. Kim, J. Lee, P. Choi, and J. K. Shin, "Simulation of High-Speed and Low-Power CMOS Binary Image Sensor Based on Gate/Body-Tied PMOSFET-Type Photodetector Using Double-Tail Comparator", J. Sens. Sci. Technol., Vol. 29, No. 2, pp. 82-88, 2020. https://doi.org/10.5369/JSST.2020.29.2.82
- S. H. Kim, H. Kwen, J. Jang, Y. M. Kim, and J. K. Shin, "2500 fps High-Speed Binary CMOS Image Sensor Using Gate/Body-Tied Type High-Sensitivity Photodetector", J. Sens. Sci. Technol., Vol. 30, No. 1, pp. 61-65, 2021. https://doi.org/10.46670/JSST.2021.30.1.61
- J. Jang, J. Lee, H. Kwen, S. H. Seo, P. Choi, and J. K. Shin, "Adjusting the Sensitivity of an Active Pixel Sensor Using a Gate/Body-Tied P-Channel Metal-Oxide Semiconductor Field-Effect Transistor-Type Photodetector With a Transfer Gate", J. Sens. Sci. Technol., Vol. 30, No. 2, pp. 114-118, 2021. https://doi.org/10.46670/JSST.2021.30.2.114