Acknowledgement
Authors would like to thank Turkish Scientifc Research Council (TÜBİTAK) for founding this research at the Department of Electrical and Electronics Engineering at Dokuz Eylul University under the contract of research project no: 117E776 (Design and modelling of a high energy efficient solar energy conversion system).
References
- Mei, L., Trillion, Q.Z., Yan, L.: An improved analytical model for predicting the switching performance of SiC MOSFETs. J. Power Electron. 16(1), 374-387 (2016) https://doi.org/10.6113/JPE.2016.16.1.374
- Millan, J., Godignon, P., Perpi, X.: A survey of wide bandgap power semiconductor devices. IEEE Trans. Power Electron. 29(5), 2155-2163 (2014) https://doi.org/10.1109/TPEL.2013.2268900
- Baliga, B.J.: Gallium nitride devices for power electronic applications. Semicond. Sci. Technol. (2013). https://doi.org/10.1088/0268-1242/28/7/074011
- Wang, B., Dong, S., Jiang, S., He, C., Hu, J., Ye, H., Ding, X.: A comparative study on the switching performance of GaN and Si power devices for bipolar complementary modulated converter legs. Energies 12(6), 1-13 (2019)
- Hou, R., Shen, Y., Zhao, H., Hu, H., Lu, J., Long, T.: Power loss characterization and modeling for GaN-based hard-switching half-bridges considering dynamic on-state resistance. IEEE Trans. Transp. Electrif. 6(2), 540-553 (2020) https://doi.org/10.1109/tte.2020.2989036
- Turan Azizoglu B., Balikci A., Durbaba E, Akpinar E., Kocamis A. E. : Comparing the Efficiency of Cascode GaN and Enhancement GaN in Boost Converter of PV System, IEEE 14 th International Conference on Compatibility, Power Electronics and Power Engineering online conference, 340-345, July (2020), Portugal
- Wang B., Dong S., Jiang S., He C., Hu J., Ye H. and Ding X. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs" Energies (2019) https://doi.org/10.3390/en12061146
- Danijel, D., Manic, I., Davidovic, V., Djoric, V.S., Golubovic, S., Stojadinovic, N.: Negative bias temperature instability in n-channel power VDMOSFETs. Microelectron. Reliab. 48, 1313-1317 (2008) https://doi.org/10.1016/j.microrel.2008.06.015
- Ninoslav, S., Dankovic, V., Manic, I.,Davidovic, V., Djoric, V.S., and Golubovic, S.,: Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs. Proc. 8th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS '07), Nis (Serbia), September 2007, 275-282. Invited Manuscript.
- Hakim T.C., Tahanout, M., Boubaaya, S.,Merah, M.: Experimental Investigation of NBTI Degradation in Power VDMOS Transistors under Low Magnetic Field. IEEE Trans. Device Mater. Reliab. (99):1-1, https://doi.org/10.1109/TDMR.2017.2666260, 2017.
- Boutros, K. S., Chu, R., and Hughes. B.: GaN Power Electronics for Automotive Applications. in Proc. 2012 Energytech, Cleveland, USD, 2012
- Chen, K. J., Haberlen, O., Lidow, A, Tsai, C. L., Ueda, T., Y. Uemoto and Y. Wu, GaN-on-Si Power Technology: Devices and Applications IEEE Trans. Power Electron Devices, 64(3), 779-795 (2017) https://doi.org/10.1109/TED.2017.2657579
- Wang J., Shu-hung Chung H., Tin-ho Li R.: Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance, IEEE Trans. on Power Electron. 28 (1), 573-590 (2013) https://doi.org/10.1109/TPEL.2012.2195332
- Miguel, R., Alberto, R., Pablo, F., Diego, G.L., Javier, S.: An insight into the switching process of power MOSFETs: an improved analytical losses model. IEEE Trans. Power Electron 25(6), 1626-1640 (2010) https://doi.org/10.1109/TPEL.2010.2040852
- Xu, M., Zhou, J., Lee, F.C.: Analytical loss model of power MOSFET. IEEE Trans. on Power Electron. 21(2), 310-319 (2006) https://doi.org/10.1109/TPEL.2005.869743
- Turan, A.B., Karaca, H.: Investigating a MOSFET driver (Buffer) circuit transition ringings using an analytical model. IEEE Trans. Power Electron. 30(9), 5058-5066 (2015) https://doi.org/10.1109/TPEL.2014.2366431
- Jones E. A., Zhang Z., Wang F.: Analysis of the dv/dt Transient of Enhancement-Mode GaN FETs. 2017 IEEE Applied Power Electron. Conf. and Exposition, Tampa, USA, 2470-6647, 26-30 March 2017
- Liu, Y., Song, Z., Yin, S., Peng, J., Jiang, H.: Analytical and experimental validation of parasitic components influence in SiC MOSFET three-phase grid-connected inverter. J. Power Electron. 19(2), 591-601 (2019) https://doi.org/10.6113/JPE.2019.19.2.591
- Letellier, A., Dubois, M.R., Trovao, J.P.F., Maher, H.: Calculation of printed circuit board power-loop stray inductance in GaN or high di/dt applications. IEEE Trans. Power Electron. 34(1), 612-623 (2019) https://doi.org/10.1109/TPEL.2018.2826920
- Han, D., Sarlioglu, B.: Dead-time effect on GaN-based synchronous boost converter and analytical model for optimal dead-time selection. IEEE Trans. Power Electron. 31(1), 601-612 (2015) https://doi.org/10.1109/TPEL.2015.2406760
- Xie, R., Wang, H., Tang, G., Yang, X., Chen, K.J.: An analytical model for false turn-on evaluation of high-voltage enhancement-mode GaN transistor in bridge-leg configuration. IEEE Trans. Power Electron. 32(8), 6416-6433 (2017) https://doi.org/10.1109/TPEL.2016.2618349
- Lu J. L. and Chen D, "Paralleling GaN E-HEMTs in 10kW-100kW systems". Proc. 2017 IEEE Applied Power Electron. Conf. and Exposition, USA, 3049-3056, (2017)
- Wang, K., Yang, X., Li, H., Ma, H., Zeng, X., Chen, W.: An analytical switching process model of low-voltage eGaN HEMTs for loss calculation. IEEE Trans. Power Electron. 31(1), 635-647 (2016) https://doi.org/10.1109/TPEL.2015.2409977
- Christen, D., Biela, J.: Analytical switching loss modelling based on datasheet parameters for MOSFETs in a half-bridge. IEEE Trans. Power Electron. 34(4), 3700-3710 (2019) https://doi.org/10.1109/tpel.2018.2851068
- 650V Enhancement Mode GaN Transistor, [Online]. Available:https://gansystems.com/gantransistors/gs66508b
- Bahl S. R., Ruiz D. and Lee D. S.: Product-level Reliability of GaN Devices, EEE International Reliability Physics Symposium, (2016)
- Lui X. S.: Methodology for EMC Analysis in a GaN Based Power Module. Ph.D. dissertation, Dept. Electrical, Optical, Bio-physics and Engineering (EOBE), University of Paris-Saclay, Paris, France, (2018)
- Liu, Q.Z., Lau, S.S.: A review of the metal-GaNcontact technology. Solid-State Electron. 42(5), 677-691 (1998) https://doi.org/10.1016/S0038-1101(98)00099-9
- GS66508B Bottom-side cooled 650 V E-mode GaN transistor Preliminary Datasheet. [Online]. https://gansystems.com/wpcontent/uploads/2018/07/GS66508B-DS-Rev-180709.pdf.
- Teledyne LeCroy, Passive Probe Ground Lead Effects. [Online]. https://teledynelecroy.com/doc/passive-probe-ground-lead-effects.
- Lidow A., Strydom J., Rooj M. D., and Reusch D.: Modeling and Measurement of GaN Transistors. GaN Transistors for efficient power conversion, 2nd ed. West Sussex, UK, Wiley, (2015)
- Jian, C., Quanming, L., Jian, H., Qingqing, H., Xiong, D.: A complete switching analytical model of low-voltage eGaN HEMTs and its application in loss analysis. IEEE Trans. Ind. Electron. 67(2), 1615-1625 (2020) https://doi.org/10.1109/tie.2019.2891466