Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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Turn-off modes of silicon carbide MOSFETs for short-circuit fault protection

  • Zhang, Jianzhong (School of Electrical Engineering, Southeast University) ;
  • Wu, Haifu (State Grid Yancheng Power Supply Company) ;
  • Zhang, Yaqian (School of Electrical Engineering, Southeast University) ;
  • Zhao, Jin (School of Electrical Engineering, Southeast University)
  • Received : 2020.08.30
  • Accepted : 2020.10.30
  • Published : 2021.02.20
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Abstract

With the rapid development of semiconductor technology, the applications of silicon carbide (SiC) MOSFETs have been booming in recent years, where short-circuit fault protection plays an important role. In this paper, voltage and current waveforms under different short-circuit faults are analyzed. Then, two types of turn-off modes, namely a soft turn-off mode and a two-stage turn-off mode are introduced. The peak voltage, short-circuit energy and anti-interference performances of SiC MOSFETs under the different turn-off modes are analyzed and compared at various DC bus voltages. The obtained experimental results show that the soft turn-off mode can reduce voltage spikes. However, it needs a blanking time to improve the anti-interference performance of the system, which increases the short-circuit energy. For the two-stage turn-off mode, the anti-interference performance of the system is improved and the short-circuit energy is obviously decreased. However, the peak voltage generated by the two-stage turn-off mode is slightly larger than that of the soft turn-off mode. On the whole, the two-stage turn-off mode is more competitive than the soft turn-off mode for the short-circuit fault protection of SiC MOSFETs.

Keywords

References

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