The Transactions of the Korean Institute of Power Electronics (전력전자학회논문지)

The Korean Institute of Power Electronics (전력전자학회)
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Development of a 3 kW Grid-tied PV Inverter With GaN HEMT Considering Thermal Considerations

GaN HEMT를 적용한 3kW급 계통연계 태양광 인버터의 방열 설계 및 개발

  • Han, Seok-Gyu (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) ;
  • Noh, Yong-Su (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) ;
  • Hyon, Byong-Jo (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) ;
  • Park, Joon-Sung (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute) ;
  • Joo, Dongmyoung (Intelligent Mechatronics Research Center, Korea Electronics Technology Institute)
  • Received : 2021.01.30
  • Accepted : 2021.03.30
  • Published : 2021.10.20
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Abstract

A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.

Keywords

Acknowledgement

본 연구는 2021년도 산업통상자원부의 재원으로 한국에너지기술평가원(KETEP)의 지원을 받아 수행한 연구 과제입니다. (No. 2018201010650A) 본 논문은 2021년도 산업통상자원부의 재원으로 한국산업기술평가원(KEIT)의 지원을 받아 수행한 연구 과제입니다. (No. 20003558)

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