Acknowledgement
This study was supported in part by Samsung Display Co. Ltd., the Brain Korea 21 Plus Project, 2021, and Korea University Grant.
References
- I. Choi, M. Kim, N. On, A. Song, K. Chung, H. Jeong, J. Park and J. Jeong, "Achieving High Moility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin Film Transistors," IEEE Trans. Electron Devices vol.67, pp.1014-1020, 2020. DOI: 10.1109/TED.2020.2968592
- H. Lee, K. Cho and S. Kim, "Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates," Semicond. Sci. Technol. vol.35, pp.065014, 2020. DOI: 10.1088/1361-6641/ab8439
- D. Kim, K. Cho, S. Woo and S. Kim, "Electrical characteristics of amorphous indium-tin-gallium-zinc oxide TFTs under positive gate bias stress," Electron. Lett. vol. 56, pp.102-104, 2020. DOI: 10.1049/el.2019.2784
- P. Ma, J. Sun, G. Zhang, G. Liang, Q. Xin, Y. Li and A. Song, "Low-temperature fabrication of HfAlO alloy dielectric using atomic-layer deposition and its application in a low-power device," Journal of Alloys and Compounds vol.792, pp.543-549, 2019. DOI: 10.1016/j.jallcom.2019.04.015
- Y. Ding, and D. Misra, "Oxide structure-dependent interfacial layer defects of HfAlO/SiO2/Si stack analyzed by conductance method," J. Vac. Sci. Technol. B, vol.33, 021203, 2015. DOI: 10.1116/1.4913280
- B. Lu, H. Lv, Y. Zhang and C. Liu, "Composition of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition," Superlattices and Microstructures vol.99, pp.54-57, 2016. DOI: 10.1016/j.spmi.2016.07.032
- C. Mahata, Y. Byun, C. An, S. Choi, Y. An and H. Kim, "Comparative Study of Atomic-LayerDeposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As," ACS Appl. Mater. Interfaces vol.5, pp.4195-4201, 2013. DOI: 10.1021/am400368x
- D. Won, H. Kim, M. Nguyen, J. Myoung, R. Choi and H. Yoon, "Residual Image Suppression Through Annealing Process of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor for Plastic Organic Light-Emitting Diode Display," J. Nanosci. Nanotechnol. vol.20, pp.6877-6883, 2020. DOI: 10.1166/jnn.2020.18807
- Z. Ye, Y. Yuan, H. Xu, Y. Liu, J. Luo, W, M. Wong, "Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory," IEEE Trans. Electron Devices vol.64, pp.438-446, 2017. DOI: 10.1109/ted.2016.2641476