참고문헌
- X. Xu et al., Nat. Electron., 1, 216 (2018). [doi: 10.1038/s41928-018-0059-3]
- M. Davies et al., IEEE Micro, 38, 82 (2018). [doi: 10.1109/MM.2018.112130359]
- T. Gokmen and Y. Vlasov, Front. Neurosci., 10, 1 (2016).
- R. Islam et al., J. Phys. D. Appl. Phys., 52, 113001 (2019). [doi: 10.1088/1361-6463/aaf784]
- W. Haensch, T. Gokmen, and R. Puri, Proc. IEEE, 107, 108, (2019). [doi: 10.1109/JPROC.2018.2871057]
- J. Woo and S. Yu, IEEE Nanotechnol. Mag., 12, 36 (2018). [doi: 10.1109/MNANO.2018.2844902]
- G. W. Burr et al., J. Appl. Phys., 111, 104308 (2012). [doi: 10.1063/1.4718574]
- W. Kim et al., 2019 Symposium on VLSI Technology (2019) p. 66. [doi: 10.23919/VLSIT.2019.8776551]
- S. La Barbera et al., Adv. Electron. Mater., 4, 1 (2018). [doi: 10.1002/aelm.201800223]
- K. Stern et al., IEEE Electron Device Lett., 3106, 1 (2021) [doi: 10.1109/led.2021.3094765]
- S. Choi et al., Nat. Mater., 17, 335 (2018). [doi: 10.1038/s41563-017-0001-5]
- D. Ielmini and G. Pedretti, Adv. Intell. Syst., 2, 2000040, (2020). [doi: 10.1002/aisy.202000040]
- S. Kim, T. Gokmen, H. M. Lee, and W. Haensch, IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS), (2017) p. 422. [doi: 10.1109/MWSCAS.2017.8052950]
- Y. Li et al., 2018 IEEE Symposium on VLSI Technology (2018) p. 25. [doi: 10.1109/VLSIT.2018.8510648]
- D. Saito et al., IEEE Trans. Electron Devices, 67, 4616 (2020). [doi: 10.1109/TED.2020.3025986]
- M. Jerry et al., Tech. Dig. Int. Electron Devices Meet. (2017), p. 6.2.1. [doi: 10.1109/IEDM.2017.8268338]
- R. Xu et al., Nano Lett., 19, 2411 (2019). [doi: 10.1021/acs.nanolett.8b05140]