Applied Microscopy

  • 제51권
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  • Pages.7.1-7.9
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  • 2021
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  • 2287-5123(pISSN)
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  • 2287-4445(eISSN)
한국현미경학회 (Korean Society of Microscopy)
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Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

  • Young-Min Kim (School of Integrated Technology, Yonsei University) ;
  • Jihye Lee (School of Integrated Technology, Yonsei University) ;
  • Deok-Jin Jeon (School of Integrated Technology, Yonsei University) ;
  • Si-Eun Oh (Nano Science and Engineering, Integrated Science and Engineering Division, Yonsei University) ;
  • Jong-Souk Yeo (School of Integrated Technology, Yonsei University)
  • 투고 : 2021.01.14
  • 심사 : 2021.05.07
  • 발행 : 2021.12.31
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초록

Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.

키워드

과제정보

This research was supported by the Ministry of Trade and Industry, the Energy/Korea Evaluation Institute of Industrial Technology (MOTIE/KEIT, project number 10080625), the Korea Semiconductor Research Consortium (KSRC) program for the development of future semiconductor devices, and Samsung Electronics. This study was also supported under the framework of the Center for Social Engagement program managed by the Institute of Convergence Science, Yonsei University.

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