Nuclear Engineering and Technology

  • 제53권4호
  • /
  • Pages.1284-1288
  • /
  • 2021
  • /
  • 1738-5733(pISSN)
  • /
  • 2234-358X(eISSN)
한국원자력학회 (Korean Nuclear Society)
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Design optimization of GaN diode with p-GaN multi-well structure for high-efficiency betavoltaic cell

  • Yoon, Young Jun (Korea Multi-purpose Accelerator Complex, Korea Atomic Energy Research Institute) ;
  • Lee, Jae Sang (Korea Multi-purpose Accelerator Complex, Korea Atomic Energy Research Institute) ;
  • Kang, In Man (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electronic and Electrical Engineering, Kyungpook National University) ;
  • Kim, Dong-Seok (Korea Multi-purpose Accelerator Complex, Korea Atomic Energy Research Institute)
  • 투고 : 2020.06.18
  • 심사 : 2020.09.14
  • 발행 : 2021.04.25
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초록

In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (JSC) and opencircuit voltage (VOC) of the devices were investigated with variations of parameters such as the doping concentration, height, width of the p-GaN well region, well-to-well gap, and number of well regions. The JSC of the device was significantly improved by a wider depletion area, which was obtained by applying the multi-well structure. The optimized device achieved a higher output power density by 8.6% than that of the conventional diode due to the enhancement of JSC. The proposed device structure showed a high potential for a high efficiency BV cell candidate.

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과제정보

This work was supported by the National Research Foundation of Korea (NRF) grant (No. 2018M2A2B3A01072437) funded by the Korea government-MSIT (Ministry of Science and ICT).

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피인용 문헌

  1. Investigation of carrier transport and collection characteristics for GaAs-based betavoltaic batteries vol.11, pp.10, 2021, https://doi.org/10.1063/5.0068261