한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제34권3호
  • /
  • Pages.193-197
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  • 2021
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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게이트 바이어스에 의한 a-IGZO 박막 트랜지스터 전기적 특성의 열화현상 분석

Investigation on the Degradation of the Electrical Characteristics of a-IGZO Thin Film Transistor Under Gate Bias Stress

  • 김태수 (한국항공대학교 항공전자정보공학부) ;
  • 전재홍 (한국항공대학교 항공전자정보공학부)
  • Kim, Tae-Soo (School of Electronics and Information Engineering, Korea Aerospace University) ;
  • Jeon, Jae-Hong (School of Electronics and Information Engineering, Korea Aerospace University)
  • 투고 : 2021.03.22
  • 심사 : 2021.04.09
  • 발행 : 2021.05.01
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초록

The transfer characteristics of amorphous indium gallium zinc oxide thin film transistor (a-IGZO TFT) showed the distortion in the subthreshold region after gate bias stress, in addition to the parallel shift of threshold voltage. The capacitance-voltage (C-V) curve was also deformed from its initial shape after the gate bias stress. This study analyzes both the C-V and transfer curves plotted on the same gate voltage axis in order to investigate the mechanism driving the distortion in the transfer curve. It is deduced that an additional interfacial trap states at the bottom interface of a-IGZO are produced during gate bias stress, thereby they exhibit the back channel effect, which explains the origin of the distortion in the transfer curve and the deformation of C-V curve.

키워드

과제정보

본 연구는 경기도의 경기도 지역협력연구센터(GRRC) 사업의 일환으로 수행하였음[GRRC-KAU-2020-B03, 극장용 영사기 및 스크린 대체를 위한 투음 디스플레이 개발].

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