한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제34권2호
  • /
  • Pages.85-89
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  • 2021
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Effects of Plasma Treatment on the Reliability of a-IGZO TFT

  • Xin, Dongxu (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Cui, Ziyang (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Taeyong (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Yi, Junsin (Department of Electrical and Computer Engineering, Sungkyunkwan University)
  • 투고 : 2020.12.29
  • 심사 : 2021.01.20
  • 발행 : 2021.03.01
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초록

High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill the oxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F (fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.

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