반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

플라즈마 정보인자 기반 가상계측을 통한 Si 식각률의 첫 장 효과 분석

Analysis of First Wafer Effect for Si Etch Rate with Plasma Information Based Virtual Metrology

  • 유상원 (서울대학교 공과대학 에너지시스템공학부) ;
  • 권지원 (서울대학교 공과대학 에너지시스템공학부)
  • Ryu, Sangwon (Department of Energy Systems Engineering, Seoul National University) ;
  • Kwon, Ji-Won (Department of Energy Systems Engineering, Seoul National University)
  • 투고 : 2021.12.03
  • 심사 : 2021.12.13
  • 발행 : 2021.12.31
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초록

Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

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과제정보

본 연구는 산업통상자원부(20006471, 20006499, 20006534)와 KSRC 지원 사업인 미래반도체소자 원천기술개발사업의 연구결과로 수행되었으며, Brain Korea 21 Four Program(No.4199990314119)와 2020년 정부(과학기술정보통신부)의 재원으로 국가과학기술연구회 2020년도 미래선도형 융합연구단 사업(No. CRC-20-01-NFRI)의 지원을 받아 수행된 연구임.

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