GaN-SBD를 이용한 RF-DC 변환기 회로 분석

An Analysis of RF-DC Converter Circuits with GaN Schottky Barrier Diodes

  • 손명식 (순천대학교 전자공학과)
  • Son, Myung Sik (Department of Electronic Engineering, Sunchon National University)
  • 투고 : 2021.11.06
  • 심사 : 2021.12.14
  • 발행 : 2021.12.31

초록

In this paper, GaN-SBD devices with excellent breakdown voltage and frequency characteristics for use in high-power microwave wireless power transmission has been modeled for PSpice circuit simulation. The RF-DC conversion circuits were simulated and compared with a commercial Si-SBD device. Although the modeled GaN-SBD devices had lower RF-DC conversion efficiency compared to Si-SBD at 2.4 and 5.8 GHz, it was confirmed through PSpice circuit simulations that they can be used sufficiently according to the required application circuit in a high power situation.

키워드

과제정보

순천대학교 교연비 사업에 의하여 연구되었음.

참고문헌

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