원자층 증착에 있어서 아르곤 펄스 시간이 Al2O3 박막에 미치는 효과

Effects on the Al2O3 Thin Film by the Ar Pulse Time in the Atomic Layer Deposition

  • 김기락 (가천대학교 전자공학과) ;
  • 조의식 (가천대학교 전자공학과) ;
  • 권상직 (가천대학교 전자공학과)
  • Kim, Ki Rak (Department of Electronics Engineering, Gachon University) ;
  • Cho, Eou Sik (Department of Electronics Engineering, Gachon University) ;
  • Kwon, Sang Jik (Department of Electronics Engineering, Gachon University)
  • 투고 : 2021.12.06
  • 심사 : 2021.12.15
  • 발행 : 2021.12.31

초록

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al2O3) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al2O3 because of its low process temperature and self-limiting reaction. In the Al2O3 deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al2O3 was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al2O3 was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al2O3 film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

키워드

과제정보

본 논문은 산업통상자원부 '산업혁신인재성장지원사업'의 재원으로 한국산업기술진흥원(KIAT)의 지원을 받아 수행된 연구임(2020년 차세대 디스플레이 공정·장비·소재 전문인력 양성사업, 과제번호: P0012453).

참고문헌

  1. S. Hu, K. Lu, H. Ning, Z. Zheng, H. Zhang, Z. Fang, R. Yao, M. Xu, L. Wang, L. Lan, J. Peng, and X. Lu, "High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer", IEEE Electron Device Letters, Vol. 38, pp. 879-882, 2017. https://doi.org/10.1109/LED.2017.2702570
  2. Y. Nam, H.-O. Kim, S. H. Cho, C.-S. Hwang, T. Kim, S. Jeon, and S.-H. K. Park, "Beneficial effect of hydrogen in aluminum oxide deposited through the atomic layer deposition method on the electrical properties of an indium-gallium-zinc oxide thin-film transistor", J. of Information Display, Vol. 17, pp. 65-71, 2016. https://doi.org/10.1080/15980316.2016.1160003
  3. H. Park, Y. Nam, J. Jin, and B.-S. Bae, "Space Charge-Induced Unusually-High Mobility of Solution Processed Indium Oxide Thin Film Transistor with Ethylene Glycol Incorporated Aluminum Oxide Gate Dielectric", RSC Advances, Vol. 00, pp. 1-3, 2015.
  4. H.-Y. Li, Y.-F. Liu, Y. Duan, Y.-Q. Yang, and Y.-N. Lu, "Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices", Materials, Vol. 8, pp. 600-610, 2015. https://doi.org/10.3390/ma8020600
  5. S.-H. K. Park, J. Oh, C.-S. Hwang, J.-I. Lee, Y. S. Yang, and H. Y. Chu, "Ultrathin Film Encapsulation of an OLED by ALD", Electrochemical and Solid-State Letters, Vol. 8, H21, 2005. https://doi.org/10.1149/1.1850396
  6. A. P. Ghosh, L. J. Gerenser, C. M. Jarman, and J. E. Fornalik, "Thin-film encapsulation of organic light-emitting devices", Applied Physics Letters Vol. 86, 223503, 2005 https://doi.org/10.1063/1.1929867
  7. Y. Y. Qing. and D. Yu, "Optimization of Al 2 O 3 Films Deposited by ALD at Low Temperatures for OLED Encapsulation", The Journal of Physical Chemistry C Vol. 118, pp. 18783-18787, 2014. https://doi.org/10.1021/jp505974j
  8. R. Katamreddy, R. Inman, G.Jursich, A. Soulet, and C. Takoudis, "ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor", J. Electrochemical Society, Vol. 153, pp. C701-C706, 2006. https://doi.org/10.1149/1.2239258
  9. S. K. Kim, S. W. Lee, C. S. Hwang, Y.-S. Min, J. Y. Won, and J. Jeong, "Low Temperature (<100°C) Deposition of Aluminum Oxide Thin Films by ALD with O3 as Oxidant", J. Electrochemical Society, Vol. 153, pp. F69-F76, 2006. https://doi.org/10.1149/1.2177047
  10. J. B. Kim, D. R. Kwon, K. Y. Oh, and C. M. Lee, "Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique", Journal of the Korean Vacuum Society, Vol. 11, No.3, pp.183-188, 2002.
  11. C. W. Jeong, J. S. Lee, and S. K. Joo, "Growth and Characterization of Aluminum Oxide(Al2O3) Thin Films by Plasma-Assisted Atomic Layer Controlled Deposition", J. Kor. Inst. Met. & Mater. Vol.38, No.10, 2000.