반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Trench구조와 산화물 고유전체에 따른 Trench MIM Capacitor S-Parameter 해석

S-Parameter Simulation for Trench Structure and Oxide High Dielectric of Trench MIM Capacitor

  • 박정래 (강남대학교 전자패키지연구소) ;
  • 김구성 (강남대학교 전자패키지연구소)
  • Park, Jung-Rae (Electronic Packaging Research Center, Kangnam University) ;
  • Kim, Gu-Sung (Electronic Packaging Research Center, Kangnam University)
  • 투고 : 2021.12.07
  • 심사 : 2021.12.08
  • 발행 : 2021.12.31
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초록

Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO2, Al2O3, and Ta2O5 are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

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과제정보

이 연구는 2020년도 산업통상자원부 및 산업기술평가관리원(KEIT) 연구비 지원에 의한 연구임('20010630').

참고문헌

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