Journal of Power Electronics

  • 제20권2호
  • /
  • Pages.634-643
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  • 2020
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  • 1598-2092(pISSN)
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  • 2093-4718(eISSN)
전력전자학회 (The Korean Institute of Power Electronics)
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Driver circuit to eliminate bridge leg crosstalk in SiC MOSFETs

  • Gao, Tian (School of Electronics and Information, Northwestern Polytechnical University) ;
  • Cheng, Ze (School of Electronics and Information, Northwestern Polytechnical University) ;
  • Wang, Qi (School of Electronics and Information, Northwestern Polytechnical University) ;
  • Yang, Yan (School of Electronics and Information, Northwestern Polytechnical University)
  • 투고 : 2019.05.08
  • 심사 : 2019.11.04
  • 발행 : 2020.03.20
⟨ 이전 논문 다음 논문 ⟩

초록

This study involves the crosstalk caused by the high-frequency parasitic parameters in the driver circuits of SiC MOSFETs, which are high-speed switching devices. A lumped parameter model for the high-frequency crosstalk of a driver circuit was established. Then, the relationships between the parameters and crosstalk of the driver circuit were analyzed. Finally, an improved SiC MOSFET driver circuit was proposed. The optimized driver circuit parameters can reduce the driver signal oscillation and minimize the crosstalk of the driver circuit. Verification was performed on a test platform of a full-bridge LLC converter. Test results show that the improved driver circuit can remarkably suppress crosstalk, increase the turn-off speed of SiC MOSFETs and reduce the switching loss. This demonstrates the effectiveness of the driver circuit.

키워드

과제정보

This paper is supported by the National Key Research and Development Program of China (Project No.: 2017YFF0104402), the China Aviation Science Fund (No.: 2018ZC53031), and the Science and Technology Project of Xi'an City [No.: 201805042YD20CG26(8)].

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