Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
권호 표지
DOI QR코드

DOI QR Code

Novel driver circuit for switching performance improvements in SiC MOSFETs

  • Received : 2020.02.13
  • Accepted : 2020.08.08
  • Published : 2020.11.20
⟨ Previous Next ⟩

Abstract

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are expected to be an attractive replacement for Si MOSFETs in high power applications due to their high blocking voltage, high switching speed, and low switching losses. However, a high switching speed can lead to voltage and current overshoot as well as oscillation during the switching process, which results in additional losses and severe electromagnetic interference. It can also exceed the limit of the SiC MOSFET and cause irreversible damage to the device. Based on an analysis of the SiC MOSFET switching process voltage and current overshoot and oscillation generation mechanism, a voltage-injected active gate driver (AGD) was proposed. The proposed AGD can suppress the voltage and current overshoot and oscillation by injecting voltage into the gate of the SiC MOSFET during specific switching stages. Experimental results show that when compared with the conventional gate driver (CGD), the proposed AGD can suppress the voltage and current overshoot peaks by 16% and 12%, while reducing voltage and current oscillation times by 58% and 31%, respectively.

Keywords

Acknowledgement

This work was supported by the Key R & D projects of Jiangsu Province under Grant BE2018130, and the industry-university-research collaboration project of Jiangsu Province under BY2019039.

References

  1. Marzoughi, A., Burgos, R., Boroyevich, D.: Investigating impact of emerging medium-voltage SiC MOSFET on medium-voltage high-power industrial motor drives, IEEE. J. Emerg. Sel. Top. Power Electron 7(2), 1371-1387 (2019) https://doi.org/10.1109/jestpe.2018.2844376
  2. Wang, P., Zhang, L., Lu, X., Sun, H., Wang, W., Xu, D.: An improved active crosstalk suppression method for high-speed SiC MOSFETs. IEEE Trans. Ind. Appl. 55(6), 7736-7744 (2019) https://doi.org/10.1109/tia.2019.2916302
  3. Liu, Y., Song, Z., Yin, S., Peng, J., Jiang, H.: Analytical and experimental validation of parasitic components influence in SiC MOSFET three-phase grid-connected inverter. J. Power Electron. 19(2), 591-601 (2019) https://doi.org/10.6113/JPE.2019.19.2.591
  4. Riazmontazer, H., Mazumder, S.K.: Optically switched-drive-based unified independent dv/dt and di/dt control for turn-of transition of power MOSFETs. IEEE. Trans. Power Electron. 30(4), 2338-2349 (2015) https://doi.org/10.1109/TPEL.2014.2327014
  5. Zhang, L., Yuan, X., Wu, X., Shi, C., Zhang, J., Zhang, Y.: Performance evaluation of high-power SiC MOSFET modules in comparison to Si IGBT modules. IEEE Trans. Power Electron. 34(2), 1181-1196 (2019) https://doi.org/10.1109/tpel.2018.2834345
  6. Risch, R., Biela, J.: Nanosecond switching of ohmic loads using SiC MOSFETs in ultra-low inductive PCB-packages. In: 2019 21st European Conference on Power Electronics and Application (EPE'19 ECCE Europe), pp. 1-10 2019.
  7. Ishikawa, K., Ogasawara, S., Takemoto, M., Orikawa, K.: Development of an SiC high-frequency PWM inverter using a thick multilayer PCB to minimize stray inductance. In: 2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia), pp. 2725-2731 2018.
  8. Yin, S., Tseng, K.J., Tong, C.F., Simanjorang, R.: Design of high-speed gate driver to reduce switching loss and mitigate parasitic efects for SiC MOSFET. IET. Power Electron. 10(10), 1183-1189 (2017) https://doi.org/10.1049/iet-pel.2016.1009
  9. Liu, H., Lorenz, R.D.: Real-time junction temperature sensing for silicon carbide MOSFET with diferent gate driver topologies and diferent operation conditions. IEEE Trans. Power Electron. 33(4), 3424-3440 (2017) https://doi.org/10.1109/tpel.2017.2704441
  10. Jahdi, S., Alatise, O., Gonzalez, J.A.O., Bonyadi, R., Ran, L., Mawby, P.A.: Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules. IEEE Trans. Power Electron. 63(2), 849-863 (2016)
  11. Liu, Y., Fei, F., See, K.Y., Liu, X., Lim, Z., Simanjorang, R., Pou, J., Gupta, A.K., Lai, J.: Switching devices comparison and rc snubber for ringing suppression in one single leg T-type converter. In: 2018 Asian Conference on Energy, Power and Transportation Electrification (ACEPT), pp. 1-5 2019.
  12. Nayak, P., Hatua, K.: Parasitic inductance and capacitance-assisted active gate driving technique to minimize switching loss of SiC MOSFET. IEEE Trans. Ind. Electron. 64(10), 8288-8298 (2017) https://doi.org/10.1109/TIE.2017.2711512
  13. Yang, Y., Wen, Y., Gao, Y.: A novel active gate driver for improving switching performance of high-power SiC MOSFET modules. IEEE Trans. Power Electron. 34(8), 7775-7787 (2019) https://doi.org/10.1109/tpel.2018.2878779
  14. Xu, C., Ma, Q., Xu, P., Cui, T., Zhang, P.: An improved active gate drive method for SiC MOSFET better switching performance. In: 2018 IEEE 3rd Advanced Information Technology, Electronic and Automation Control Conference (IAEAC), pp. 1114-1119 (2018)
  15. Liang, M., Zheng, T.Q., Li, Y.: An improved analytical model for predicting the switching performance of SiC MOSFETs. J. Power Electron. 16(1), 374-387 (2016) https://doi.org/10.6113/JPE.2016.16.1.374
  16. Ke, J., Xie, Z., Wei, C., Cui, X.: Analysis of switching clamped oscillation of SiC MOSFETs. J. Power Electron. 18(3), 892-901 (2018) https://doi.org/10.6113/JPE.2018.18.3.892
  17. Qin, H., Zhu, C.M.Z., Yan, Y.: Infuence of parasitic parameters on switching characteristics and layout design considerations of SiC MOSFETs. J. Power Electron. 18(4), 1255-1267 (2018) https://doi.org/10.6113/JPE.2018.18.4.1255
  18. Acharya, S., She, X., Tao, F., Frangieh, T., Todorovic, M.H., Datta, R.: Active gate driver for SiC-MOSFET-based PV inverter with enhanced operating range. IEEE Trans. Ind. Appl. 55(2), 1677-1689 (2019) https://doi.org/10.1109/tia.2018.2878764