Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
권호 표지
DOI QR코드

DOI QR Code

Enhancement of energy efficiency of 3-phase inverter using LFS UMOSFET

  • Received : 2020.06.01
  • Accepted : 2020.09.08
  • Published : 2020.09.30
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, the energy efficiency of a 4H-SiC UMOSFET with a local floating superjunction (LFS UMOSFET) was compared with a conventional P-shielding UMOSFET. For analysis, P-shielding UMOSFET and LFS UMOSFET were modeled for energy loss and junction temperature. As a result, LFS UMOSFET showed switching loss reduction of 20.6%. In addition, it was confirmed that LFS UMOSFET is applied to a 3-phase inverter, resulting in 33.2% lower power efficiency and 28.1% lower junction temperature than P-shielding UMOSFET. Electrical characteristics were simulated using Sentaurus TCAD, and the power circuit was simulated with the modelled UMOSFET using PSIM, a power circuit simulator.

Keywords

References

  1. B. J. Baliga, Fundamentals of Power Semiconductor Devices, USA: Springer, 2008.
  2. B. J. Baliga, Advanced power MOSFET concepts, USA: Springer, 2010.
  3. B. J. Baliga, Silicon Carbide Power Devices, USA: Springer, 2006.
  4. R. S. Saxena and M. J. Kumar, "Trench gate power MOSFET: Recent advances and innovations," in Advances in Microelectronics and Photonics. Commack, ch.1, pp.1-23, 2012.
  5. C. Hu and Q. Lu, "A unified gate oxide reliability model," IEEE International Reliability Physics Symposium Proceeding, pp.47-51, 1999. DOI: 10.1109/RELPHY.1999.761591
  6. J. Goh and K. Kim. "Low on-resistance 4H-SiC UMOSFET with local floating superjunction," Journal of Computational Electronics, Vol.19, No.1, pp.234-241, 2020. DOI: 10.1007/s10825-019-01408-1
  7. T.C.A.D. Synopsys Sentaurus Device Manual Synopsys, Inc, Mountain View, CA, USA, 2012.
  8. F. Udrea, G. Deboy, T. Fujihira, "Superjunction power devices history development and future prospects," IEEE Trans. Electron Devices, vol.64, no.3, pp.713-727, 2017. DOI: 10.1109/TED.2017.2658344
  9. K. Tian, J. Liu, J. Cui, C. Zhou, A. Zhang, "Novel designs of 4H-SiC trench gate metal-oxidesemiconductor field effect transistors (UMOSFETs) with low on-resistance," 2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), pp.35-37, 2016. DOI: 10.1109/IFWS.2016.7803750
  10. X. Zhou, R. Yue, J. Zhang, et al, "4H-SiC trench MOSFET with floating/grounded junction barrier-controlled gate structure," IEEE Transactions on Electron Devices, Vol.64, No.11, pp.4568-4574, 2017. DOI: 10.1109/TED.2017.2755721
  11. S. Harada, Y. Kobayashi, K. Ariyoshi, T. Kojima, et al, "3.3kV-class 4H-SiC MeV-implanted UMOSFET with reduced gate oxide field," IEEE Electron Device Lett., vol.37, no.3, pp.314-316, 2016. DOI: 10.1109/LED.2016.2520464
  12. P. Szabo, O. Steffens, M. Lenz, G. Farkas, "Transient junction-to-case thermal resistance measurement methodology of high accuracy and high repeatability," IEEE Transactions on Components and Packaging Technologies, Vol.28, No.4, pp. 630-636, 2005. DOI: 10.1109/TCAPT.2005.859768
  13. D. Graovac, M. Purschel, A. Kiep, "MOSFET power losses calculation using the data-sheet parameters, Infineon application note," Vol.1, pp. 1-23, 2006.
  14. X. Li, L. Zhang, S. Guo, Y. Lei, A. Q. Huang, B. Zhang, "Understanding switching losses in SiC MOSFET: Toward lossless switching," 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), pp. 257-262, 2015. DOI: 10.1109/WiPDA.2015.7369295
  15. "Junction Temperature," Rohm technical support, 2019. https://www.rohm.com/electronics-basics/transistors/calculating-transistor-temperature