Applied Microscopy

  • Volume 50
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  • Pages.27.1-27.6
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  • 2020
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  • 2287-5123(pISSN)
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  • 2287-4445(eISSN)
Korean Society of Microscopy (한국현미경학회)
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Sequential conversion from line defects to atomic clusters in monolayer WS2

  • Gyeong Hee Ryu (School of Materials Science and Engineering, Gyeongsang National University) ;
  • Ren-Jie Chan (Department of Materials, University of Oxford)
  • Received : 2020.11.08
  • Accepted : 2020.11.12
  • Published : 2020.12.31
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Abstract

Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS2 and WS2, S vacancies are formed preferentially, and they are aligned linearly to constitute line defects. And then, a hole is formed at the point where the successively formed line defects collide, and metal clusters are also formed at the edge of the hole. This study reports a process in which the line defects formed in a monolayer WS2 sheet expends into holes. Here, the process in which the W cluster, which always occurs at the edge of the formed hole, goes through a uniform intermediate phase is explained based on the line defects and the formation behavior of the hole. Further investigation confirms the atomic structure of the intermediate phase using annular dark field scanning transition electron microscopy (ADF-STEM) and image simulation.

Keywords

Acknowledgement

This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2020R1G1A1099542).

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