Nuclear Engineering and Technology

Korean Nuclear Society (한국원자력학회)
권호 표지
DOI QR코드

DOI QR Code

Studying the operation of MOSFET RC-phase shift oscillator under different environmental conditions

  • Ibrahim, Reiham O. (Physics Dept, Faculty of Women for Arts, Science, and Education, Ain-Shams Univ) ;
  • Abd El-Azeem, S.M. (Electronic Res. Lab (E.R.L), Faculty of Women for Arts, Science, and Education, Ain Shams Univ) ;
  • El-Ghanam, S.M. (Electronic Res. Lab (E.R.L), Faculty of Women for Arts, Science, and Education, Ain Shams Univ) ;
  • Soliman, F.A.S. (Nuclear Materials Authority)
  • Received : 2019.10.08
  • Accepted : 2020.01.13
  • Published : 2020.08.25
Download PDF
⟨ Previous Next ⟩

Abstract

The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 ℃) up-to135 ℃ and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 ℃, down to 0.163 A, at 135 ℃. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.

Keywords

References

  1. Ankit Rana, Colpitts Oscillator, Design and performance optimization, J. Electr. Electron. Syst. 3 (2014) 913-919.
  2. B. Visvesvara Rao, et al., Electronic Circuit Analysis, Pearson, India, 2012.
  3. M.S. Ansari, Iqbal A. Khan, Parveen Beg, Ahmed M. Nahhas, Three phase mixed-mode CMOS VCO with grounded passive components, Electr. Electron. Eng. J. 3 (2013) 149-155.
  4. 2n6660 N-Channel Enhancement Mode Vertical DMOSFET, 2016. Microchip.
  5. G. Philip, Neudeck, high-temperature electronics-A role for wide bandgap semiconductor, Proc. IEEE 90 (2002) 1065-1076. https://doi.org/10.1109/JPROC.2002.1021571
  6. N. Rinaldi, V. d'Alessandro, Theory of electrothermal behavior of bipolar transistors: Part II two-finger devices, IEEE Trans. Electron. Dev. 52 (2005) 2022-2033. https://doi.org/10.1109/TED.2005.854275
  7. F. Haider, et al., Characterization of proton irradiation effect in semiconductor material, Int. J. Appl. Phys. Math. 3 (2013) 341-344.
  8. I.M. Vikulin, et al., Radiation sensitive detector based on field-effect transistors, J. Radio Electron. Commun. Syst. 60 (2017) 401-404. https://doi.org/10.3103/S0735272717090035
  9. Md Atikur Rahman, A review on semiconductors including applications and temperature effects in semiconductors, Am. Sci. Res. J. Eng. Technol. Sci. 7 (2014) 50-70.
  10. Jitty Jose, et al., Analysis of temperature effect on MOSFET parameter using MATLAB, IJEDR 4 (2016) 530-535.
  11. T.R. Oldham, F. McLean, Total ionizing dose effects in MOS oxides and devices, IEEE Trans. Nucl. Sci. 50 (2003) 483-499. https://doi.org/10.1109/TNS.2003.812927
  12. T.L. Floyd, Electronic Devices, ninth ed., Prentice-Hall Inc., USA, 2012.
  13. A.S. Sedra, K.C. Smith, Microelectronic Circuits, seventh ed., Oxford Univ. Press, USA, 2014.
  14. Robert Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, seventh ed., Prentice-Hall Inc., USA, 2013.
  15. R. Sujatha, et al., Study of the effect of gamma radiation on MOSFET for space application, Indian J. Pure Appl. Phys. 56 (2018) 587-590.
  16. A.P. Godse, U.A. Bakshi, Electronic and Devices Circuits, second ed., Technical publication pune, India, 2009.