반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Impact of Sintering Gas Pressure on Deep-red EuSi2O2N2 Phosphors

  • Deressa, Gemechu (Department of Applied Chemistry, School of Applied Natural Science, Adama Science and Technology University) ;
  • Kim, Jongsu (Department of Display Science and Engineering, Pukyong National University) ;
  • Kim, Gwangchul (Physics Department, School of Liberal Arts, KOREATECH)
  • 투고 : 2020.05.25
  • 심사 : 2020.06.11
  • 발행 : 2020.06.30
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초록

Deep red EuSi2O2N2 phosphors were synthesized under various sintering gas pressures (1 atm, 2 atm, and 3 atm). They were in good agreement with the standard EuSi2O2N2 ICSD card # 41-6046 (a monoclinic crystal system with space group of P21/a). Their photoluminescence intensities were significantly increased with increasing the gas pressures. They showed a broad band emission peaking at 680 nm due to 4f65d1 - 4f7 of Eu2+ ion, which can be efficiently excited in the visible range up to 550 nm. The best one at 3 atm was applied for red LED based on blue chip, which showed the strong deep red emission.

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참고문헌

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