한국전자통신학회논문지 (The Journal of the Korea institute of electronic communication sciences)

한국전자통신학회 (Korea Institute of Electronic Communication Science)
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S대역 군사 레이더용 2kW급 GaN HEMT 증폭기 개발

Development of 2-kW Class C Amplifier Using GaN High Electron Mobility Transistors for S-band Military Radars

  • 투고 : 2020.04.07
  • 심사 : 2020.06.15
  • 발행 : 2020.06.30
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초록

본 논문에서는 S-밴드 군용 레이더에 사용되고 기존의 TWTA를 대체하기 위해 GaN HEMT 기반 증폭모듈을 이용하여 개발한 2kW급 반도체증폭기(SSPA)를 제안하였다. 제안한 SSPA는 8개의 증폭모듈로 이루어진 고출력증폭모듈, 구동증폭모듈, 제어모듈 및 전원공급 장치로 이루어져 있다. 제안한 SSPA는 1) 증폭모듈과 구성부품은 공간적 제약으로 작은 패키지에 통합설계 되었으며, 2) PCB 내장형 하모닉필터를 이용하여 고주파를 제거하였으며, 그리고 3) 입력신호의 듀티 변화에 대응하여 일정한 출력이 유지되도록 하는 자동이득조절기를 설계하였다. 제안된 SSPA는 최대 48 dB의 이득과 3.1~3.5 GHz의 주파수 대역에서 63-63.6 dBm의 출력 전력을 보였다. 자동이득조절 기능은 15-20 dBm의 입력전력 변동에도 대해서, 출력전력이 63dBm 전후로 일정하게 유지하는 것을 확인하였다. 마지막으로 MIL-STD-810의 시험기준을 만족하는 높은 (55 ℃) / 낮은 (-40 ℃) 온도시험 프로파일을 이용한 온도시험을 통해 개발된 시스템의 신뢰성을 검증하였다. 개발된 SSPA는 경량, 고출력, 고이득, 안전기능, 낮은 수리비, 짧은 수리시간 등 측면에서 기존의 TWTA 증폭기보다 우수한 것을 확인하였다.

This paper proposes a 2-kW solid-state power amplifier (SSPA) developed by employing power amplifier pallets designed using gallium-nitride high electron mobility transistors, which is used in S-band military radars and to replace existing traveling-wave tube amplifier (TWTA). The SSPA consists of a high-power amplifier module, which combines eight power amplifier pallets, a drive amplifier module, a digital control module, and a power supply unit. First, the amplifier module and component were integrated into a small package to account for space limitations; next, an on-board harmonic filter was fabricated to reject spurious components; and finally, an auto gain control system was designed for various duty ratios because recent military radar systems are all active phase radars using the pulse operation mode. The developed SSPA exhibited a max gain of 48 dB and an output power ranging between 63-63.6 dBm at a frequency band of 3.1 to 3.5 GHz. The auto gain control function showed that the output power is regulated around 63 dBm despite the fluctuation of the input power from 15-20 dBm. Finally, reliability of the developed system was verified through a temperature environment test for nine hours at high (55 ℃) / low (-40℃) temperature profile in accordance with military standard 810. The developed SSPA show better performance such as light weight, high output, high gain, various safety function, low repair cost and short repair time than existing TWTA.

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참고문헌

  1. M. Hanczor and M. Kumar, "12 kW S-band Solid State Transmitter for Modern Radar Systems," IEEE Transactions on Microwave Theory and Techniques, vol. 12, 1993, pp. 2237-2242.
  2. K, Kim, Y. Lee, J. Joo, H. Kim, J. Choi, and D. Park, "1.5 kW, S-Band Solid-State Pulsed Power Amplifier with digitally controlled Automatic Gain control Circuit," Int. Conf. on Asia-Pacific Microwave Conference, Yokohama, Japan, Dec. 2006, pp. 714-717.
  3. H. Shigematsu, Y. Inoue, A. Akasegawa, M. Yamada, S. Masuda, K. Kamada, A. Yamada, M. Kanamura, T. Ohki, K. Makiyama, N. Okamoto, K. Imanishi, T. Kikkawa, K. Joshin, and N. Hara, "C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE," Int. Conf. on IEEE MTT-S Int. Microwave Symp. Digest, Boston, USA, June 2009, pp. 1265-1268.
  4. S. Yang, "Design and fabrication of SSPA module in X-band for Radar," J. of the Korea Institute of Electronic Communication Science, vol. 13, no. 5, 2018, pp. 943-948. https://doi.org/10.13067/JKIECS.2018.13.5.943
  5. H. Maehara, H. Uchida H, N. Kosaka, E. Kuwata, K. Yamanaka, J. Nishihara, K. Kawashima, and M. Nakayama, "Internally matched GaN FET at C-band with 220 W output power and 56% power added efficiency," Int. Conf. on Asia-Pacific Microwave Conference, Kaohsiung, Taiwan, Dec. 2012, pp. 358-360.
  6. Y. Okamoto, T. Nakayama, Y. Ando, A. Wakejima, K. Matsunaga, K. Ota, and H. Miyamoto, "230 W C-band GaN-FET power amplifie," Electronics Letter, vol. 43, no. 17, 2007, pp. 927-929. https://doi.org/10.1049/el:20071855
  7. K. Krishnamurthy, M. Poulton, J. Martin, R. Vetury, J. Brown, and J. Shealy, "A 250 W S-Band GaN HEMT amplifier," Int. Conf. on IEEE Compound Semiconductor Integrated Circuit Symp., Portland, USA, Oct. 2007, pp. 1-4.
  8. H. Song, J. Kim, H. Kang, J. Song, C. Park, K. Rhee, C. Lee, and D. Kim, "Development of SSPA-based X-band Transmitter with Graceful Degradation," J. of the Korea Institute of Electronic Communication Science, vol. 14, no. 5, 2019, pp. 853-862.
  9. Z. Cheng, D. Zhu, G. Yan, G. Liu, and S. Gao, "A 3-7 GHz GaN HEMT power amplifier," Microw. Opt. Technol. Lett. vol. 58, no. 4, 2016, pp. 901-904. https://doi.org/10.1002/mop.29699
  10. J. Kwack, K. Kim, and S. Cho, "1 kW S-band solid state radar amplifier," Int. Conf. on IEEE 12th Annual Wireless and Microwave Technology Conference, Florida, USA, Apr. 2012, pp. 1-4.
  11. S. Mohadeskasaei, F. Lin, X. Zhou, and S. Abdullahi, "Design of a 2.5-kW L-band solid-state pulsed power amplifier for radar applications," Electronics Letters, vol. 53, no. 15, 2017, pp. 1071-1073. https://doi.org/10.1049/el.2017.0493
  12. Department of Defense(DoD), "Environmental Engineering Considerations and Laboratory Tests," MIL-STD-810G w/Change-1, 2014. 4.
  13. J. Joo, G. Choi, S. Jang, J. Choi, and D. Park, "1.5 kW solid-state pulsed microwave power amplifier for S-band radar application," Int. Conf. on 2006 IEEE Radio and Wireless Symposium, San Diego, USA, Oct. 2006, pp. 171-174.