International Journal of Internet, Broadcasting and Communication

The Institute of Internet, Broadcasting and Communication (한국인터넷방송통신학회)
권호 표지
DOI QR코드

DOI QR Code

A Trapping Behavior of GaN on Diamond HEMTs for Next Generation 5G Base Station and SSPA Radar Application

  • Received : 2020.02.21
  • Accepted : 2020.03.02
  • Published : 2020.05.31
Download PDF
⟨ Previous Next ⟩

Abstract

We demonstrated a successful fabrication of 4" Gallium Nitride (GaN)/Diamond High Electron Mobility Transistors (HEMTs) incorporated with Inner Slot Via Hole process. We made in manufacturing technology of 4" GaN/Diamond HEMT wafers in a compound semiconductor foundry since reported [1]. Wafer thickness uniformity and wafer flatness of starting GaN/Diamond wafers have improved greatly, which contributed to improved processing yield. By optimizing Laser drilling techniques, we successfully demonstrated a through-substrate-via process, which is last hurdle in GaN/Diamond manufacturing technology. To fully exploit Diamond's superior thermal property for GaN HEMT devices, we include Aluminum Nitride (AlN) barrier in epitaxial layer structure, in addition to conventional Aluminum Gallium Nitride (AlGaN) barrier layer. The current collapse revealed very stable up to Vds = 90 V. The trapping behaviors were measured Emission Microscope (EMMI). The traps are located in interface between Silicon Nitride (SiN) passivation layer and GaN cap layer.

Keywords

References

  1. Mo Wu, Won Sang Lee et al, "Fabrication of 4-inch GaN/Diamond HEMT in Compound Semiconductor Foundry." 2018 International Conference on Compound Semiconductor Manufacturing Technology, May 2018.
  2. G. Formicone, J. Cluster, and J. Berger, "First Demonstration of GaN-SiC RF Technology Operating Above 100 V in S-band", 2017 International Conference on Compound Semiconductor Manufacturing Technology, May 2017.
  3. D.J. Meyer et al, IEEE Electr. Dev. Lett., vol. 35, pp. 1013-1015, 2014. https://doi.org/10.1109/LED.2014.2345631
  4. M.J. Tadjer et al, IEEE Electr. Dev. Lett., vol. 33, pp. 23-25, 2012. https://doi.org/10.1109/LED.2011.2171031
  5. D. Altman, M. Tyhach, J. McClymonds, S. Kim, S. Graham, J. Cho, K. Goodson, D. Francis, F. Faili, F. Ejeckam, and S. Bernstein, "Analysis and Characterization of Thermal Transport in GaN HEMTs on Diamond Substrates, I-THERM 2014 Conference in Orlando, FL.
  6. J. Pomeroy, M. Benardoni, A. Sarua, A. Manoi, D.C. Dumka, D.M. Fanning and M. Kuball, "Achieving the Best Thermal Performance for GaN-on-Diamond" 35th IEEE Compound Semiconductor IC Symposium (CSICS) Oct. 13-16, 2013.
  7. D.C. Dumka et al., Proc. CSICS, 2013. DOI: http://doi.org/10.1109/CSICS. 2013.6659225.
  8. Sun-il Kim, "Design and Fabrication of SSPA module in Ku band for Satellite Terminals." Journal of Institute of Internet, Broadcasting and Communication (IIBC) Vol. 16, No. 4, pp. 59-64, Aug. 31, 2016. DOI: http://dx.doi.org/10.7236/JIIBC.2016.16.4.59
  9. R. Vetury, N. Q. Zhang, et al., "The impact of surface state on the DC and RF characteristics of AlGaN/GaN HFETs." IEEE Trans. Electron Devices, vol. 48, pp.560-566. Mar. 2001. https://doi.org/10.1109/16.906451
  10. S. Binari, K. Ikossi, et al., "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol 48, pp.465-471, Mar. 2001. https://doi.org/10.1109/16.906437
  11. Won Sang Lee et al, "A GaN/Diamond HEMTs with 23 W/mm for Next Generation High Power RF Application," 2019 International Microwave Symposium, June 2019.