Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Structural and Optical Properties of CuS Thin Films Grown by RF Magnetron Sputtering

RF 마그네트론 스퍼터링법으로 성장시킨 CuS 박막의 구조적 및 광학적 특성

  • Shin, Donghyeok (School of Materials Science and Engineering, Pusan National University) ;
  • Lee, SangWoon (School of Materials Science and Engineering, Pusan National University) ;
  • Son, Chang Sik (Division of Materials Science and Engineering, Silla University) ;
  • Son, Young Guk (School of Materials Science and Engineering, Pusan National University) ;
  • Hwang, Donghyun (Division of Materials Science and Engineering, Silla University)
  • 신동혁 (부산대학교 재료공학과) ;
  • 이상운 (부산대학교 재료공학과) ;
  • 손창식 (신라대학교 신소재공학부) ;
  • 손영국 (부산대학교 재료공학과) ;
  • 황동현 (신라대학교 신소재공학부)
  • Received : 2020.01.09
  • Accepted : 2020.02.26
  • Published : 2020.02.29
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Abstract

CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm-1 and 474cm-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

Keywords

References

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