참고문헌
- D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found", Nature, 453(7191), 80 (2008). https://doi.org/10.1038/nature06932
- A. Sawa, "Resistive switching in transition metal oxides", Mater. Today, 11(6), 28 (2008). https://doi.org/10.1016/S1369-7021(08)70119-6
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges", Adv. Mater., 21(25-26), 2632 (2009). https://doi.org/10.1002/adma.200900375
- A. Chanthbouala, V. Garcia, R. O. Cherifi, K. Bouzehouane, S. Fusil, X. Moya, S. Xavier, H. Yamada, C. Deranlot, N. D. Mathur, M. Bibes, A. Barthelemy, and J. Grollier, "A ferroelectric memristor", Nat. Mater., 11, 860 (2012). https://doi.org/10.1038/nmat3415
- J. Lee, S. Choi, C. Lee, Y. Kang, and D. Kim, "GeSbTe deposition for the PRAM application", Appl. Surf. Sci., 253(8), 3969 (2007). https://doi.org/10.1016/j.apsusc.2006.08.044
- Z. Li and S. Zhang, "Domain-wall dynamics driven by adiabatic spin-transfer torques", Phys. Rev. B, 70(2), 024417 (2004). https://doi.org/10.1103/PhysRevB.70.024417
-
H. S. Lee, S. G. Choi, H.-H. Park, and M. J. Rozenberg, "A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in
$Pr_{0.7}Ca_{0.3}MnO_3$ ", Sci. Rep., 3, 1704 (2013). https://doi.org/10.1038/srep01704 -
H.-Y. Kim, S.-J. Park, and G. E. Jang, "Microstructure and Electrical Properties of
$SrBi_2Ta_2O_9$ Ferroelectric Thin Films Prepared by RF Magnetron Sputtering Method", J. Microelectron. Packag. Soc., 6(2), 51 (1999). - J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, "Memristive switching mechanism for metal/oxide/metal nanodevices", Nat. nanotechnol., 3(7), 429 (2008). https://doi.org/10.1038/nnano.2008.160
- H. S. Lee, "The Latest Trends and Issues of Anion-based Memristor", J. Microelectron. Packag. Soc., 26(1), 1 (2019). https://doi.org/10.6117/KMEPS.2019.26.1.001
- H. S. Lee, H.-H. Park, and M. J. Rozenberg, "Manganitebased memristive heterojunction with tunable non-linear I-V characteristics", Nanoscale, 7(15), 6444 (2015). https://doi.org/10.1039/C5NR00861A
- V. K. Sangwan, H.-S. Lee, H. Bergeron, I. Balla, M. E. Beck, K.-S. Chen, and M. C. Hersam, "Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide", Nature, 554(7693), 500 (2018). https://doi.org/10.1038/nature25747
- Y. Yang, H. Du, Q. Xue, X. Wei, Z. Yang, C. Xu, D. Lin, W. Jie, and J. Hao, "Three-terminal memtransistors based on two-dimensional layered gallium selenide nanosheets for potential low-power electronics applications", Nano Energy, 57, 566 (2019). https://doi.org/10.1016/j.nanoen.2018.12.057
- L. Wang, W. Liao, S. L., Wong, Z. G. Yu, S. Li, Y.-F. Lim, X. Feng, W. C. Tan, X. Huang, L. Chen, L. Liu, J. Chen, X. Gong, C. Zhu, X. Liu, Y.-W. Zhang, D. Chi, and K.-W. Ang, "Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application", Adv. Funct. Mater., 29(25), 1901106 (2019). https://doi.org/10.1002/adfm.201901106
- V. Lujala, J. Skarp, M. Tammenmaa, and T. Suntola, "Atomic layer epitaxy growth of doped zinc oxide thin films from organometals", Appl. Surf. Sci., 82-83, 34 (1994). https://doi.org/10.1016/0169-4332(94)90192-9
- L.-Y. Chen, W.-H. Chen, J.-J. Wang, and F. C.-N. Hong, "Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering", Appl. Phys. Lett., 85(23), 5628 (2004). https://doi.org/10.1063/1.1835991
- Z. Zhou, K. Kato, T. Komaki, M. Yoshino, H. Yukawa, M. Morinaga, and K. Morita, "Effects of dopants and hydrogen on the electrical conductivity of ZnO", J. Eur. Ceram. Soc., 24(1), 139 (2004). https://doi.org/10.1016/S0955-2219(03)00336-4