Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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NO2 gas sensor using an AlGaN/GaN Heterostructure FET with SnO2 catalyst deposited by ALD technique

원자막증착법(ALD) SnO2 촉매를 적용한 AlGaN/GaN 이종접합 트랜지스터 NO2 가스센서

  • Yang, Suhyuk (Dept. of Electronic and Electrical Engineering, Hongik University) ;
  • Kim, Hyungtak (Dept. of Electronic and Electrical Engineering, Hongik University)
  • Received : 2020.11.26
  • Accepted : 2020.12.30
  • Published : 2020.12.31
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Abstract

In this work, it was confirmed that a SnO2 catalyst deposited by an atomic layer deposition(ALD) process can be employed in AlGaN/GaN heterostructure FET to detect NO2 gas. The fabricated HFET sensors on AlGaN/GaN-on-Si platform demonstrated that the devices with or without n-situ SiN have sensitivity of 5.5 % and 38 % at 200 ℃, respectively with response to 100 ppm-NO2.

본 연구에서는, 원자막증착법(ALD) 공정으로 증착된 SnO2 촉매를 AlGaN/GaN 이종접합 FET에 적용하여 NO2 가스 검출이 가능한 것을 확인하였다. AlGaN/GaN-on-si 플랫폼에서 제작 된 HFET 센서로 NO2 100 ppm에 대하여 In-situ SiN이 있는 소자와 없는 소자가 각각 100 ℃, 200 ℃에서 10.1% 및 17.7%, 5.5% 및 38%의 감지성능을 확인하였다.

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References

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