References
- K. W. Park, E. Y. Kim, and D. S. Park, "Effects of CMP Retaining Ring Material on the Performance of Wafer Polishing," Journal of the Korean Society of Manufacturing Process Engineers, vol. 19, no. 3, pp. 22-28, (2020). https://doi.org/10.14775/ksmpe.2020.19.03.022
- J. H. Lee, S. K. Park, and S. H. Yang, "A Study on the Characteristics of Electro Polishing and Utility Materials for Transit High Purity Gas ," Journal of the Korean Society of Indus try Convergence, vol. 7, No. 3, pp. 259-263, (2004).
- J. M. Steigerwald, S. P. Murarka, R. J. Gutmann, and D. J. Duquette, "Chemical Processes in the Chemical Mechanical Polishing of Copper," Materials Chemistry and Physics, vol. 41, no. 3, pp. 217-228, (1995). https://doi.org/10.1016/0254-0584(95)01516-7
- K., Zhai, Q. He, L. Li, and Y. Ren, "Study on Chemical Mechanical Polishing of Silicon Wafer with Megasonic Vibration Assisted," Ultrasonics, vol. 80, pp. 9-14, (2017). https://doi.org/10.1016/j.ultras.2017.04.005
- W. J. Lee, H. S. Park, and H. C. Shin, "Enhancement of CMP Pad Lifetime for Shallow Trench Isolation Process using Profile Simulation," Current Applied Physics, vol. 9, no. 1, pp. 134-137, (2009).
- S. H. Lee, H. J. Kim, D. G. Ahn, and H. D. Jeong, "A Study on Novel Conditioning for CMP," Journal of the Korean Society for Precision Engineering, vol. 16, no. 5, pp. 40-47, (1999).
- J. H. Oh, H. S. Lee, H. C. Cho, J. H. Ahn, S. J. Park, and H. D. Jeong, "Stres s Dis tribution on the Wafer according to Pad Profile," In Proceedings of the Korean Society of Precision Engineering Conference, pp. 363-364, (2008).
- L. Shan, C. Zhou, and S. Danyluk, "Mechanical Interactions and Their Effects on Chemical Mechanical Polishing," IEEE Transactions on Semiconductor Manufacturing, vol. 14, no. 3, pp. 207-213, (2001). https://doi.org/10.1109/66.939815
- O. Chang, H. Kim, K. Park, B. Park, H. Seo, and H. Jeong, "Mathematical Modeling of CMP Conditioning Process," Microelectronic Engineering, vol. 84, no. 4, pp. 577-583, (2007). https://doi.org/10.1016/j.mee.2006.11.011
- Z. C. Li, E. A. Baisie, and X. H. Zhang, "Diamond Disc Pad Conditioning in Chemical Mechanical Planarization (CMP): a Surface Element Method to Predict Pad Surface Shape," Precision engineering, vol. 36, no. 2, pp. 356-363, (2012). https://doi.org/10.1016/j.precisioneng.2011.10.006
- T. Sun, L. Borucki, Y. Zhuang, and A. Philipossian, "Investigating the Effect of Diamond Size and Conditioning Force on Chemical Mechanical Planarization Pad Topography," Microelectronic Engineering, vol. 87, no. 4, pp. 553-559, (2010). https://doi.org/10.1016/j.mee.2009.08.007
- D. Lee, K. Lee, S. Jeong, H. Kim, H. Cho, H. Jeong, "Effect of Diamond Abrasive Shape of CMP Conditioner on Polishing Pad Surface Control," Tribology and Lubricants, vol. 35, no. 6, pp. 330-336, (2019).
- Jr, C. R. Johnson, A. S. William, and G. K. Andrew, "Software receiver design: build your own digital communication system in five easy steps," Cambridge University Press, pp. 416-417, (2011).
- A. S. Lawing, "Pad Conditioning for Poromeric Materials," International Conference on Planarization/CMP Technology, VDE, (2017).