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Noise analysis of cascode LNA with 65nm CMOS technology

65nm CMOS 기술에서의 cascode기반 LNA 잡음지수 분석

  • Jung, Youngho (Department of Electronic and Electrical Engineering, Daegu University) ;
  • Koo, Minsuk (Department of Electrical and Computer Engineering, Purdue University)
  • Received : 2020.05.10
  • Accepted : 2020.05.15
  • Published : 2020.05.31

Abstract

In this paper, we analyzed the noise figure of cascode low noise amplifier (LNA) based on the measured data of 65nm CMOS devices. By using the channel thermal noise model of transistors, we expanded noise figure equation and divided the equation into three parts to see its contributions to noise figure. We also varied design parameters such as bias point, transistor gate width, and operating frequency. Our results show that different noise sources dominate at the different operating frequencies. One can easily find the noise transition frequency with device models in ahead of the practical design. Therefore, this research provides a low noise design approach for different operating frequencies.

Keywords

References

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