WBG 스위치를 적용한 소용량 플라이백 컨버터의 내부손실 특성과 효율 개선에 관한 연구

A Study A on Internal Loss Characteristics and Efficiency Improvement of Low Power Flyback Converter Using WBG Switch

  • 안태영 (청주대학교 전자공학과) ;
  • 유정상 (청주대학교 전자공학과)
  • Ahn, Tae Young (Department of Electronic Engineering, Cheongju University) ;
  • Yoo, Jeong Sang (Department of Electronic Engineering, Cheongju University)
  • 투고 : 2020.12.11
  • 심사 : 2020.12.15
  • 발행 : 2020.12.31

초록

In this paper, efficiency and loss characteristics of GaN FET were reported by applying it into the QR flyback converter. In particular, for the comparison of efficiency characteristics, QR flyback converter experimental circuits with Si FET and with GaN FET were separately produced in 12W class. As a result of the experiment, the experimental circuit of the QR flyback converter using GaN FET reached a high efficiency of 90% or more when the load power was 2W or more, and the maximum efficiency was observed to be about 92%, and the maximum loss power was about 1.1W. Meanwhile, the efficiency of the experimental circuit with Si FET increased as the input voltage increased, and the maximum efficiency was observed to be about 82% when the load power was 9W or higher, and the maximum loss power was about 2.8W. From the results, it is estimated that that in the case of the experimental circuit applying the GaN FET switch, the power conversion efficiency was improved as the switching loss and conduction loss due to on-resistance were reduced, and the internal loss due to the synchronous rectifier was minimized. Consequently, it is concluded that the GaN FET is suitable for under 20W class power supply unit as a high efficiency power switch.

키워드

참고문헌

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