Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Characterization of alpha-Ga2O3 epilayers grown on cone-shape patterned sapphire substrate by halide vapor phase epitaxy

원뿔 형태의 patterned sapphire substrate 위에 성장한 α-Ga2O3의 특성분석

  • Son, Hoki (Korea Institute of Ceramic Engineering & Technology) ;
  • Choi, Ye-Ji (Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Young-Jin (Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Jin-Ho (Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Sun Woog (Korea Institute of Ceramic Engineering & Technology) ;
  • Ra, Yong-Ho (Korea Institute of Ceramic Engineering & Technology) ;
  • Lim, Tae-Young (Korea Institute of Ceramic Engineering & Technology) ;
  • Hwang, Jonghee (Korea Institute of Ceramic Engineering & Technology) ;
  • Jeon, Dae-Woo (Korea Institute of Ceramic Engineering & Technology)
  • Received : 2019.07.29
  • Accepted : 2019.08.12
  • Published : 2019.08.31
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Abstract

In this study, we demonstrated a characterization of ${\alpha}-Ga_2O_3$ grown on a cone-shape patterned sapphire substrate by using the halide vapor phase epitaxy. An ${\alpha}-Ga_2O_3$ was grown on different size of PSS and c-plane sapphire substrate for comparison to confirm the effect of PSS. In addition, growth time of ${\alpha}-Ga_2O_3$ was gradually increased to confirm growth mechanism of ${\alpha}-Ga_2O_3$ grown on the PSS. A growth temperature was changed to $470-550^{\circ}C$. It can be analyzed growth conditions and mechanisms on the cone-shape PSS, resulting in a significant decrease in the FWHM value of an asymmetric plane (10-14) of ${\alpha}-Ga_2O_3$, due to lateral growth that occurs during the growth process.

본 연구에서는 halide vapor phase epitaxy 성장법을 이용하여 원뿔 형태의 패턴이 주기적으로 형성된 patterned sapphire substrate(PSS) 위에 ${\alpha}-Ga_2O_3$를 성장하고 그 특성에 변화에 대해 분석하였다. PSS의 패턴의 유무에 따른 영향을 알아보기 위해 c-plane 사파이어 기판과 원뿔의 크기가 다른 두 개의 PSS 위에 ${\alpha}-Ga_2O_3$를 성장하여 비교 분석하였다. 또한 PSS 위에 성장된 ${\alpha}-Ga_2O_3$의 성장과정을 알아보기 위해 점차 성장 시간을 증가해가며 관찰하였고 성장 온도를 $470-550^{\circ}C$까지 변화해가며 성장하였다. 이를 통해 원뿔 형태의 패턴이 형성된 PSS 위에서의 최적 성장 조건과 그 성장 mechanism에 대해 분석이 가능하였고 그 결과로 성장과정에서 발생하는 수평 성장에 의해 ${\alpha}-Ga_2O_3$의 비대칭면인 (10-14) 반치폭 값을 크게 감소시킬 수 있었다.

Keywords

References

  1. M. Higashiwaki, H. Murakami, Y. Kumagai and A. Kuramata, "Current status of $Ga_2O_3$ power devices", Jpn. J. Appl. Phys. 55 (2016) 1202A1. https://doi.org/10.7567/JJAP.55.1202A1
  2. Z. Hu, K. Nomoto, W. Li, N. Tanen, K. Sasaki, A. Kuramata, T. Nakamura, D. Jena and H.G. Xing, "Enhancement-mode $Ga_2O_3$ vertical transistor with breakdown voltage > 1 kV", IEEE Electron Device Lett. 39 (2018) 869. https://doi.org/10.1109/LED.2018.2830184
  3. S.J. Pearton, F. Ren, M. Tadjer and J.H. Kim, "Perspective: $Ga_2O_3$ for ultra-high power rectifiers and MOSFETS", J. Appl. Phys. 124 (2018) 220901. https://doi.org/10.1063/1.5062841
  4. D.Y. Guo, X.L. Zhao, Y.S. Zhi, W. Cui, Y.Q. Huang, Y.H. An, P.G. Li, Z.P. Wu and W.H. Tang, "Epitaxial growth and solar-blind photoelectric properties of corundum-structured ${\alpha}-Ga_2O_3$ thin films", Mater. Lett. 164 (2016) 364. https://doi.org/10.1016/j.matlet.2015.11.001
  5. D.Y. Guo, Z.P. Wu, P.G. Li, Y.H. An, H. Liu, X.C. Guo, H. Yan, G.F. Wang, C.L. Sun, L.H. Li and W.H. Tang, "Fabrication of ${\beta}-Ga_2O_3$ thin films and solar-blind photodetector by laser MBE technology", Opt. Mater. Express 4 1067 (2014) 1067. https://doi.org/10.1364/OME.4.001067
  6. C. Jin, S. Park, H. Kim and C. Lee, "Ultrasensitive multiple networked $Ga_2O_3$-core/ZnO-shell nanorod gas sensors", Sens. Actuators B. 161 (2012) 223. https://doi.org/10.1016/j.snb.2011.10.023
  7. K. Sasaki, A. Kuramata, T. Masui, E.G. Villora, K. Shimamura and S. Yamakoshi, "Device-quality ${\beta}-Ga_2O_3$ epitaxial films fabricated by ozone molecular beam epitaxy", Appl. Phys. Express 5 (2012) 035502. https://doi.org/10.1143/APEX.5.035502
  8. M. Higashiwaki, K. Sasaki, T. Kamimura, M.H. Wong, D. Krishnamurthym A. Kuramata, T. Masui and S. Yamakoshi, "Depletion-mode $Ga_2O_3$ metal-oxide-semiconductor field-effect transistors on ${\beta}-Ga_2O_3$ (010) substrates and temperature dependence of their device characteristics", Appl. Phys. Lett. 103 (2013) 123511. https://doi.org/10.1063/1.4821858
  9. K. Kaneko, H. Kawanowa, H. Ito and S. Fujita, "Evaluation of misfit in alpha-$Ga_2O_3$ epitaxial growth on alpha-$Al_2O_3$ substrate", Jpn. J. Appl. Phys. 51 (2012) 020201.
  10. K. Kaneko, I. Kakeya, S. Komori and S. Fujita, "Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with ${\alpha}-(GaFe)_2O_3$", J. Appl. Phys. 113 (2013) 233901. https://doi.org/10.1063/1.4807651
  11. K. Akaiwa, K. Kaneko, K. Ichino and S. Fujita, "Conductivity control of Sn-doped ${\alpha}-Ga_2O_3$ thin films grown on sapphire substrate", Jpn. J. Appl. Phys. 55 (2016) 1202BA. https://doi.org/10.7567/JJAP.55.1202BA
  12. Y. Oshima, E.G. Villora and K. Shimamura, "Halide vapor phase epitaxy of twin-free ${\alpha}-Ga_2O_3$ on sapphire (0001) substrate", Appl. Phys. Express 8 (2015) 055501. https://doi.org/10.7567/APEX.8.055501
  13. D.H. Kang, E.S. Jang, H. Song, D.W. Kim, J.S. Kim, I.H. Lee, S. Kannappan and C.R. Lee, "Growth and evaluation of GaN grown on patterned sapphire substrate", J. Korean Phys. Soc. 52 (2008) 1895. https://doi.org/10.3938/jkps.52.1895
  14. H.K. Son and D.W. Jeon, "Optimization of the growth temperature of ${\alpha}-Ga_2O_3$ epilayers grown by halide vapor phase epitaxy", J. Alloys Compd. 773 (2019) 631. https://doi.org/10.1016/j.jallcom.2018.09.230
  15. H.K. Son, Y.J. Choi, J.H. Hwang and D.W. Jeon, "Influence of post-annealing on properties of ${\alpha}-Ga_2O_3$ epilayer grown by halide vapor phase epitaxy", ECS J. Solid State Sci. Technol. 7 (2019) Q1. https://doi.org/10.1149/2.0131802jss
  16. Y. Chen, Z. Chen, J. Li, Y. Chen, C. Li, J. Zhan, T. Yu, X. Kang, F. Jiao, S. Li, G. Zhang and B. Shen, "A study of GaN nucleation and coalescence in the initial growth stage on nanoscale patterned sapphire substrate via MOCVD", Cryst. Eng. Comm. 20 (2018) 6811. https://doi.org/10.1039/C8CE01450G