Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Double Exposure Laser Interference Lithography for Pattern Diversity using Ultraviolet Continuous-Wave Laser

  • Ma, Yong-Won (Interdisciplinary Department for Advanced Innovative Manufacturing Engineering, Pusan National University) ;
  • Park, Jun Han (Department of Cogno-Mechatronics Engineering, Pusan National University) ;
  • Yun, Dan Hee (Interdisciplinary Department for Advanced Innovative Manufacturing Engineering, Pusan National University) ;
  • Gwak, Cheongyeol (Interdisciplinary Department for Advanced Innovative Manufacturing Engineering, Pusan National University) ;
  • Shin, Bo Sung (Department of Cogno-Mechatronics Engineering, Pusan National University)
  • Received : 2019.06.10
  • Accepted : 2019.06.25
  • Published : 2019.06.30
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Abstract

The newly discovered properties of periodic nanoscale patterns have increasingly sparked research interests in various fields. Along this direction, it is worth mentioning that there had been rare studies conducted on interference exposure, a method of creating periodic patterns. Additionally, these few studies seemed to validate the existence of only exact quadrangle shapes and dot patterns. This study asserted the formation of wavy patterns associated to using multiple exposures of the ratio of the first exposure intensity to the second exposure intensity. Such patterns were designed and constructed herein via overlapping of two Gaussian beams relative to certain rotation angles, and with a submicron structure fabricated based on a 360-nm continuous-wave laser. Results confirmed that the proposed double exposure laser interference lithography is able to create circular, elliptical and wavy patterns with no need for complex optical components.

Keywords

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Fig. 1. Absorption coefficient graph according to wavelength and exposure.

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Fig. 2. Schematic of laser interference lithography system.

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Fig. 3. Schematic of double exposure with sample rotation.

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Fig. 4. SEM micrographs of the double exposure pattern: at a rotation angle of 90° (×10,000 magnification).

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Fig. 6. Simulation of double exposures at sample rotation angle of 24° (Ratio of the first exposure intensity to the second exposure intensity) (a) 1:1, (b) 1:0.8, (c) 1:0.6, (d) 1:0.4, and (e) 1:0.2.

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Fig. 7. SEM image of double exposure: at rotation angle of 24°.

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Fig. 8. SEM image of double exposure according to intensity distribution: rotation angle 24°.

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Fig. 5. (a) Simulation of double exposure at a rotation angle of 12°; (b) Case 1: SEM image of double exposure; (c) a magnified SEM image of Fig. 3(b); (d) Case 2: SEM image of double exposure and; (e) magnification of the SEM image in Fig. 3(d).

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