Fig. 1. (a) Micro-photograph image with the pad electrode names (scale bar, 100 μm), (b) circuit schematic, and (c) cross-sectional view with the epitaxial layer structure of the proposed GaN UV PPS.
Fig. 2. Energy band structure of metal (ITO)/GaN contact interface with a Schottky barrier lowering effect using the gate bias at the gate overlapped region of the source contact.
Fig. 3. (a) Dark and photoresponsive I–V characteristics and (b) spectral photoresponsivity characteristics of the fabricated GaN MSM UV sensor. The optical power density of a 365-nm UV light was 447 mW/㎠.
Fig. 4. (a) Output IDS–VDS characteristics under dark, (b) output IDS– VDS characteristic under 365-nm UV irradiation, (c) linear and log-scale transfer IDS–VGS characteristics under dark, and (d) linear and log-scale transfer IDS–VGS characteristics under 365-nm UV irradiation of the fabricated GaN SB-MOSFET. The optical power density of a 365-nm UV light was 447 mW/㎠.
Fig. 5. (a) Linear-scale and (b) log-scale output I–V characteristics of the fabricated GaN UV PPS with/without 365-nm UV irradiation. The GaN UV PPS was fabricated by integration of a GaN MSM UV sensor and a GaN SB-MOSFET.
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