Fig. 1. Cross-sectional β-Ga2O3 MOSFET structure with MBE-grown epitaxial layers.
Fig. 3. Analysis data for MESA etching process; (a) surface roughness by AFM, (b) etching angle by cross-sectional FIB SEM photograph.
Fig. 4. DC IDS-VDS characteristics of β-Ga2O3 MOSFET with MBE-grown Si-doped channel.
Fig. 5. DC specific Rds,oncharacteristics of β-Ga2O3 MOSFET.
Fig. 6. DC transfer characteristics of β-Ga2O3 MOSFET with Si-doped MBE-grown channel layer.
Fig. 7. DC breakdown voltage characteristics of β-Ga2O3 MOSFET measured at room temperature.
Fig. 2. (a) Plan-view optical micrograph and (b) magnified device active area of β-Ga2O3 MOSFET.
Table 1. Material properties for major semiconductors.
References
- M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett., 100, 013504 (2012). [DOI: https://doi.org/10.1063/1.3674287]
- A. Kuramata, K. Koshi, S. Watanabe, Y. Yamaoka, T. Masui, and S. Yamakoshi, Jpn. J. Appl. Phys., 55, 1202A2 (2016). [DOI: https://doi.org/10.7567/jjap.55.1202A2]
- M. Higashiwaki, A. Kuramata, H. Murakami, and Y. Kumagai, J. Phys. D: Appl. Phys., 50, 333002 (2017). [DOI: https://doi.org/10.1088/1361-6463/aa7aff]
- G. Jessen, K. Chabak, A. Green, N. Moser, J. McCandless, K. Leedy, A. Crespo, and S. Tetlak, Proc. 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (IEEE, Miami, USA, 2017) p. 1.
- T. Oshima, T. Okuno, and S. Fujita, Jpn. J. Appl. Phys., 46, 7217 (2007). [DOI: https://doi.org/10.1143/jjap.46.7217]
-
B. Bayraktaroglu, Assessment of
$Ga_{2}O_{3}$ Technology [DOI: https://www.dtic.mil/dtic/tr/fulltext/u2/1038137.pdf] - A. Y. Polyakov, N. B. Smirnov, I. V. Schemerov, A. V. Chernykh, E. B. Yakimov, A. I. Kochkova, A. N. Tereshchenko, and S. J. Pearton, ECS J. Solid State Sci. Technol., 8, Q3091 (2018). [DOI: https://doi.org/10.1149/2.0171907jss]
- A. Y. Polyakov, N. B. Smirnov, I. V. Schemerov, S. J. Pearton, F. Ren, A. V. Chernykh, and A. I. Kochkova, Appl. Phys. Lett., 113, 142102 (2018). [DOI: https://doi.org/10.1063/1.5051986]
- S. Karmalkar and U. K. Mishra, IEEE Trans. Electron Devices, 48, 1515 (2001). [DOI: https://doi.org/10.1109/16.936500]
- K. Zeng, A. Vaidya, and U. Singisetti, IEEE Electron Device Lett., 39, 1385 (2018). [DOI: https://doi.org/10.1109/LED.2018.2859049]
- H. Liang, Y. Chen, X. Xia, C. Zhang, R. Shen, Y. Liu, Y. Luo, and G. Du, Mater. Sci. Semicond. Process., 39, 582 (2015). [DOI: https://doi.org/10.1016/j.mssp.2015.05.065]
- A. P. Shah and A. Bhattacharya, J. Vac. Sci. Technol., A, 35, 041301 (2017). [DOI: https://doi.org/10.1116/1.4983078]
- L. Zhang, A. Verma, H. (G.) Xing, and D. Jena, Jpn. J. Appl. Phys., 56, 030304 (2017). [DOI: https://doi.org/10.7567/jjap.56.030304]
- J. Yang, S. Ahn, F. Ren, S. Pearton, R. Khanna, K. Bevlin, D. Geerpuram, and A. Kuramata, J. Vac. Sci. Technol., B, 35, 031205 (2017). [DOI: https://doi.org/10.1116/1.4982714]
- J. K. Mun, K. J. Choi, J. W. Do, H. S. Lee, S. B. Bae, and W. J. Chang, Proc. Journal of the Korean Institute of Electrical and Electronic Material Engineers Annual Summer Conference 2018 (CDM THE BIG, Goseong-Gun, Korea, 2018) p. 35.
- H. Yu, M. Schaekers, T. Schram, N. Collaert, K. D. Meyer, N. Horiguchi, A. Thean, and K. Barla, IEEE Electron Device Lett., 35, 957 (2014). [DOI; https://doi.org/10.1109/LED.2014.2340821]
- J. T. Asubar, J. Ng, H. Tokuda, and M. Kuzuhara, Compd. Semicond. Mag., 22, 26 (2016). [DOI: https://data.angel.digital/pdf/CSOct16.compressed.pdf]
- J. H. Ji and J. H. Koh, J. Korean Inst. Electr. Electron. Mater. Eng., 30, 3 (2017). [DOI: http://kiss.kstudy.com/thesis/thesis-view.asp?key=3517150]