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Optimization of Imidization Condition Using Dielectric Analysis

Dielectric analysis를 이용한 이미드화 조건 최적화 연구

  • Sur, Young-sek (Human Convergence Technology Group, Korea Institute of Industrial Technology (KITECH)) ;
  • Jang, Si-hoon (Human Convergence Technology Group, Korea Institute of Industrial Technology (KITECH)) ;
  • Park, Joon-chul (Human Convergence Technology Group, Korea Institute of Industrial Technology (KITECH)) ;
  • Kim, Hyun-woo (Department of Material Science and Engineering, Hanyang University) ;
  • Park, No-hyung (Human Convergence Technology Group, Korea Institute of Industrial Technology (KITECH))
  • Received : 2018.10.24
  • Accepted : 2019.02.11
  • Published : 2019.02.28

Abstract

Polyimides (PIs) are polymers that have the basic structure of a rigid aromatic chain. PIs have excellent thermal and chemical properties, as well as low dielectrical properties. Therefore, PIs have been widely used in various industrial fields. In general, a PI is prepared by reacting dianhydride with diamine to prepare a precursor, poly (amic acid) (PAA), and then imidizing this precursor. The conditions of the imidization reaction have a large influence on the final properties of the PI; thus, it is very important to optimize the imidization conditions. In this study, optimal conditions (temperature and time) for imidization were investigated using dielectric analysis (DEA). To manufacture the PIs, pyromellitic dianhydride (PMDA) was used as a dianhydride, 4,4'-oxydianiline (ODA), 4,4'-(1,3-phenylenedioxy)-dianiline (TPE), and bis(trifluoromethyl) benzidine (TFDB/TFMB) as diamines, and n-methyl-2-pyrrolidone (NMP) as a solvent. The PI film was obtained by drying the PAA solution at $100^{\circ}C$, and imidizing the PAA film at $200^{\circ}C$ and $350^{\circ}C$, respectively. The thermal decomposition temperature ($T_{d;5 wt%}$) was measured by thermogravimetric analysis (TGA) and the mechanical properties, such as tensile strength and elongation at break, were measured to confirm the effect of imidization conditions on the physical properties of the PI.

Keywords

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