Fig. 1. Conceptual schematic of resistive switching mechanism of memristor.
Fig. 2. Typical I-V characteristic of memristor. The numbers indicate switching sequence. (reprinted with permission from [13], Springer Nature).
Fig. 3. Conceptual schematic of representative resistive switching mechanism of filament type and interface type. Arrows colors of each bias correspond to directions of oxygen anion migration.
Fig. 4. Complementary switching curve. (reprinted with permission from [16], Springer Nature).
Fig. 5. a) Schematic diagram of crossbar array architecture, b) circuit diagram of 2 x 2 crossbar array architecture. (reprinted with permission from [19], Springer Nature).
Fig. 7. Virtual potentiation/depression characteristics: a) ideal curve, b) real curve.
Fig. 11. Conceptual schematic of gate tunable potentiation/depression curve.
Fig. 6. Solutions for sneak current issue.
Fig. 8. a) a representative TEM image of a 3 × 3 memristor crossbar array with 2 × 2nm2 device area and with sub-12-nm pitch. b) a typical I-V curve for a 2-nm Pt/TiOx/HfO2/Pt memristor in the array. c) Simulated electric field distribution in 2-nm memristor crossbars with the centre cell selected are plotted for a cross-sectional view along the bottom electrode direction. (reprinted with permission from [22], Springer Nature).
Fig. 9. a) a conceptual schematic of the epiRAM during switching. b) cross-sectional TEM image of 60nm SiGe grown on a Si substrate. Scale bar, 25 nm c) cross-sectional SEM image of an epiRAM device. (reprinted with permission from [23], Springer Nature).
Fig. 10. a) ID-VD curves for ten consecutive sweeps at each gate bias VG for the same device. b) Transfer characteristics of a memtransistor at VD = 0.1 V. (reprinted with permission from [24], Springer Nature).
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