Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Fabrication and Properties of Organic Semiconductor CuPccp LB Thin Film

유기 반도체 CuPccp LB초박막의 제작 및 특성

  • Jho, Mean Jea (Department of Energy Convergence Engineering, Cheongju University) ;
  • Xouyang, Saiyang (Research Intitute of Photovoltaics, Cheongju University) ;
  • Lee, Jin Su (Department of Laser and Optical Information Engineering, Cheongju University) ;
  • Ahn, Da Hyun (Department of Laser and Optical Information Engineering, Cheongju University) ;
  • Jung, Chi Sup (Department of Laser and Optical Information Engineering, Cheongju University)
  • 조민재 (청주대학교 에너지융합공학과) ;
  • 쑤양싸이양 (청주대학교 태양광연구소) ;
  • 이진수 (청주대학교 레이저광정보공학과) ;
  • 안다현 (청주대학교 레이저광정보공학과) ;
  • 정치섭 (청주대학교 레이저광정보공학과)
  • Received : 2018.11.15
  • Accepted : 2019.01.04
  • Published : 2019.01.31
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Abstract

A copper tetracumylphenoxy phthalocyanine (CuPccp) thin film was formed on an organic insulator film by Langmuir-Blodgett (LB) deposition for gas sensor fabrication. To increase the reproducibility of film transfer, stearyl alcohol was used as a transfer promoter. The structural properties of the CuPccp layers were optically monitored through attenuated total reflection and polarization-modulated ellipsometry techniques. The average thickness of a single layer of the CuPccp LB film was measured to be 2.5 nm. Despite the role of the transfer promoter, the stability of the layer transfer was not sufficient to ensure homogeneity of the LB film. This was probably due to the presence of aggregates in the molecular structure of the CuPccp LB film. Nevertheless, copper phthalocyanine polymorphism can be greatly suppressed by the LB arrangement, which appears to contribute to the improvement of electrical conductivity. The p-type semiconductor characteristics were confirmed by Hall measurements from the CuPccp LB films.

Keywords

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Fig.. 1. Experimental setup for measurement of ATR resonance peak shift

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Fig. 2. Schematic Diagram of a PME system measuring phase retardation.

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Fig. 3-1. Π-A isotherm of P(VDF-TrFE) ferroelectric polymer Langmuir film

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Fig. 3-2. Π-A isotherm of copper-phthalocyanine Langmuir film

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Fig. 4. Observed changes of the ATR peaks of gold covered with P(VDF-TrFE) and CuPc(cp)4 films. Thickness of Au film is 48 nm.

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Fig. 5. Observed changes of the ATR peaks of silver covered with CuPc(cp)4 films of different thicknesses. Thickness of silver film is 50 nm.

Table 1. The change in the ATR resonance angle measured for three different thickness CuPc(cp)4 films and one overlayer of P(VDF-TrFE). The thickness of each layer was evaluated from the resonance angle shift.

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Table 3. Moving distance of the compensator to compensate for the phase retardation caused by film deposition and evaluated film thickness: Measurement were carried out on nine different thickness films of CuPc(cp)4.

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Table 3. Moving distance of the compensator to compensate for thephase retardation caused by film deposition and evaluatedfilm thickness: Measurement were carried out on nine dif-ferent thickness films of CuPc(cp)4.

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Table 4. Semiconductor properties of the CuPc(cp)4 LB film observed from Hall effect measurement.

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