Fig.. 1. Experimental setup for measurement of ATR resonance peak shift
Fig. 2. Schematic Diagram of a PME system measuring phase retardation.
Fig. 3-1. Π-A isotherm of P(VDF-TrFE) ferroelectric polymer Langmuir film
Fig. 3-2. Π-A isotherm of copper-phthalocyanine Langmuir film
Fig. 4. Observed changes of the ATR peaks of gold covered with P(VDF-TrFE) and CuPc(cp)4 films. Thickness of Au film is 48 nm.
Fig. 5. Observed changes of the ATR peaks of silver covered with CuPc(cp)4 films of different thicknesses. Thickness of silver film is 50 nm.
Table 1. The change in the ATR resonance angle measured for three different thickness CuPc(cp)4 films and one overlayer of P(VDF-TrFE). The thickness of each layer was evaluated from the resonance angle shift.
Table 3. Moving distance of the compensator to compensate for the phase retardation caused by film deposition and evaluated film thickness: Measurement were carried out on nine different thickness films of CuPc(cp)4.
Table 3. Moving distance of the compensator to compensate for thephase retardation caused by film deposition and evaluatedfilm thickness: Measurement were carried out on nine dif-ferent thickness films of CuPc(cp)4.
Table 4. Semiconductor properties of the CuPc(cp)4 LB film observed from Hall effect measurement.
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