Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Study on the Coupled Effects of Process Parameters on Silicon Growth Using Chemical Vapor Deposition

  • Ramadan, Zaher (Dept. of Mechanical Design Eng., College of Engineering, Chonbuk National University) ;
  • Ko, Dong Kuk (Dept. of Mechanical Eng., College of Engineering, Chonbuk National University) ;
  • Im, Ik-Tae (Dept. of Mechanical Design Eng., College of Engineering, Chonbuk National University)
  • Received : 2019.09.18
  • Accepted : 2019.09.26
  • Published : 2019.09.30
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Abstract

Response surface methodology (RSM) is used to investigate the complex coupling effects of different operating parameters on silicon growth rate in planetary CVD reactor. Based on the computational fluid dynamics (CFD) model, an accurate RSM model is obtained to predict the growth rate with different parameters, including temperature, pressure, rotation speed of the wafer, and the mole fraction of dichlorosilane (DCS). Analysis of variance is used to estimate the contributions of process parameters and their interactions. Among the four operating parameters that have been studied, the influences of susceptor temperature and the operating pressure were the most significant factors that affect silicon growth rate, followed by the mole fraction of DCS. The influence of wafer rotation is the least. The validation tests show that the results of silicon deposition rate obtained from the regression model are in good agreement with those from CFD model and the maximum deviations is 2.15%.

Keywords

References

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