한국전자파학회논문지 (The Journal of Korean Institute of Electromagnetic Engineering and Science)

  • 제29권10호
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  • Pages.766-772
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  • 2018
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  • 1226-3133(pISSN)
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  • 2288-226X(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
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광대역 응용을 위한 6~10 GHz InGaAs 0.15μm pHEMT 27 dBm급 전력증폭기

Wide-Band 6~10 GHz InGaAs 0.15μm pHEMT 27 dBm Power Amplifier

  • 투고 : 2018.05.28
  • 심사 : 2018.09.28
  • 발행 : 2018.10.31
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 InGaAs enhancement mode $0.15{\mu}m$ pHEMT를 이용하여 6~10 GHz 대역에서 동작하는 wide-band 전력증폭기를 설계하였다. Enhancement 소자는 gate 바이어스를 양전압으로 사용하며, 음전압을 위한 추가회로 구성이 없어지며 모듈의 크기를 줄일 수 있다. 또한, 본 설계에서는 3D-EM(electromagnetic) 시뮬레이션을 통해 패키지 본드와이어의 인덕턴스 및 기판 손실을 예측하여 설계하였다. 광대역을 위해 lossy matching을 사용하고, 전력, 효율 관점에서 최적의 바이어스를 선정하여 설계하였다. 제안한 전력증폭기의 패키지 칩은 6~10 GHz 대역에서 20 dB 이상의 평탄 이득, 8 dB 이상의 입출력 반사손실, 출력전력은 27 dBm 이상, 전력부가효율은 35 % 이상으로 측정되었다.

A 6~10 GHz wide-band power amplifier was designed using an InGaAs enhancement-mode(E-mode) $0.15{\mu}m$ pseudomorphic high-electron-mobility transistor(pHEMT). The positive gate bias of the E-mode pHEMT device removes the need for complex negative voltage generation circuits, therefore reducing the module size. The wire bond and substrate loss parameters were modeled and extracted using a three-dimensional electromagnetic(3D EM) simulation. For wideband characteristics, lossy matching was adopted and the gate bias was optimized for maximum power and efficiency. The measured gain, in/output return loss, output power, and power-added efficiency were greater than 20 dB, 8 dB, 27 dBm, and 35 %, respectively, in the 6~10 GHz band.

키워드

참고문헌

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