Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
권호 표지
DOI QR코드

DOI QR Code

Effect of TiO Addition on Morphologies and Luminescence Properties of ZnO Crystals Fabricated by Vapor Transport Method

기상이동법에 의해 제조된 ZnO 결정의 형상 및 발광 특성에 미치는 TiO 첨가의 영향

  • Lee, Geun-Hyoung (Electrical & Electronic Materials Engineering Major, Division of Advanced Materials Engineering, Dong-eui University)
  • 이근형 (동의대학교 신소재공학부 전기전자소재공학전공)
  • Received : 2018.08.10
  • Accepted : 2018.09.27
  • Published : 2018.10.27
Download PDF
⟨ Previous Next ⟩

Abstract

ZnO micro/nanocrystals are formed by a vapor transport method. Mixtures of ZnO and TiO powders are used as the source materials. The TiO powder acts as a reducing agent to reduce the ZnO to Zn and plays an important role in the formation of ZnO micro/nanocrystals. The vapor transport process is carried out in air at atmospheric pressure. When the weight ratios of TiO to ZnO in the source material are lower than 1:2, no ZnO micro/nanocrystals are formed. However, when the ratios of TiO to ZnO in the source material are greater than 1:1, the ZnO crystals with one-dimensional wire morphology are formed. In the room temperature cathodoluminescence spectra of all the products, a strong ultraviolet emission centered at 380 nm is observed. As the ratio of TiO to ZnO in the source material increases from 1:2 to 1:1, the intensity ratio of ultraviolet to visible emission increases, suggesting that the crystallinity of the ZnO crystals is improved. Only the ultraviolet emission is observed for the ZnO crystals prepared using the source material with a TiO/ZnO ratio of 2:1.

Keywords

References

  1. Z. Zhou, C. Zhan, Y. Wang, Y. Su, Z. Yang and Y. Zhang, Mater. Lett., 65, 832 (2011). https://doi.org/10.1016/j.matlet.2010.12.032
  2. M. Biswas, E. McGlynn and M. O. Henry, Microelectron. J., 40, 259 (2009). https://doi.org/10.1016/j.mejo.2008.07.013
  3. Y. S. Lim, J. W. Park, S. T. Hong and J. Kim, Mater. Sci. Eng., B, 129, 100 (2006). https://doi.org/10.1016/j.mseb.2005.12.021
  4. C. X. Xu, X. W. Sun, Z. L. Dong and M. B. Yu, Appl. Phys. Lett., 85, 3878 (2004). https://doi.org/10.1063/1.1811380
  5. B. D. Yao, Y. F. Chan and N. Wang, Appl. Phys. Lett., 81, 757 (2002). https://doi.org/10.1063/1.1495878
  6. H. Lv, D. D. Sang, H. D. Li, X. B. Du, D. M. Li and G. T. Zou, Nanoscale Res. Lett., 5, 620 (2010). https://doi.org/10.1007/s11671-010-9524-2
  7. Z. Zhang, S. J. Wang, T. Yu and T. Wu, J. Phys. Chem. C, 111, 17500 (2007). https://doi.org/10.1021/jp075296a
  8. P. Yang, H. Yan, S. Mao, R. Russo, J. Johnson, R. Saykally, N. Morris, J. Pham, R. He and H. J. Choi, Adv. Funct. Mater., 12, 323 (2002). https://doi.org/10.1002/1616-3028(20020517)12:5<323::AID-ADFM323>3.0.CO;2-G
  9. X. Wang, J. Song and Z. L. Wang, Chem. Phys. Lett., 424, 86 (2006). https://doi.org/10.1016/j.cplett.2006.04.013
  10. S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee, H. W. Shim, E. K. Suh and C. J. Lee, Chem. Phys. Lett., 363, 134 (2002). https://doi.org/10.1016/S0009-2614(02)01145-4