Journal of Ceramic Processing Research

Ceramic Processing Research Center (한양대학교 세라믹연구소)
권호 표지

Controlling of the heterogeniously growing GaN polycrystals using a quartz ring in the edge during the HVPE-GaN bulk growth

  • Park, Jae Hwa (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Hee Ae (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Park, Cheol Woo (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Kang, Hyo Sang (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Joo Hyung (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • In, Jun-Hyeong (Division of Advanced Materials Science and Engineering, Hanyang University) ;
  • Lee, Seong Kuk (UNIMO Photron) ;
  • Shim, Kwang Bo (Division of Advanced Materials Science and Engineering, Hanyang University)
  • Published : 2018.10.01
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Abstract

The outstanding characteristics of high quality GaN single crystal substrates make it possible to apply the manufacture of high brightness light emitting diodes and power devices. However, it is very difficult to obtain high quality GaN substrate because the process conditions are hard to control. In order to effectively control the formation of GaN polycrystals during the bulk GaN single crystal growth by the HVPE (hydride vapor phase epitaxy) method, a quartz ring was introduced in the edge of substrate. A variety of evaluating method such as high resolution X-ray diffraction, Raman spectroscopy and photoluminescence was used in order to measure the effectiveness of the quartz ring. A secondary ion mass spectroscopy was also used for evaluating the variations of impurity concentration in the resulting GaN single crystal. Through the detailed investigations, we could confirm that the introduction of a quartz ring during the GaN single crystal growth process using HVPE is a very effective strategy to obtain a high quality GaN single crystal.

Keywords

Acknowledgement

Supported by : Ministry of Trade, Industry, and Energy

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